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UTC UT3N06G-AE3-R UT3N06G
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UTC UT3N06G-AE3-R
- Type
- UTC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UTC
- Electronic Component
- UT3N06G-AE3-R
- Electronic Component
- 1
- Package
- SOT-23(SOT-23-3)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.036g
- Electronic Component
- 1
- Electronic Component
- BM69415928
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 490pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：UT3N06G-AE3-R N沟道MOSFET
UT3N06G-AE3-R是UTC（友顺）公司推出的一款高性能N沟道场效应管（MOSFET），其设计旨在满足现代电子设备对高效能、高可靠性以及小型化的需求。这款MOSFET主要采用SOT-23封装，适合用于空间受限的应用场景，其规格参数使其在多种领域中广受欢迎，如电源管理、开关电路、信号放大等。
关键参数
功率处理能力：UT3N06G-AE3-R具有350mW的最大功率处理能力，适合设计应用于较低功率的电路中。其功率可处理性使其在日常电子产品及小型电源模块中表现出色。
电压和电流限制：该MOSFET的最大漏极到源极电压(VDS)为60V，能够在中高电压的场合下稳定工作。此外，其最大漏极电流(ID)可达到3A，适应了对瞬时电流具有较大需求的应用环境。
封装类型：SOT-23封装的选择为该器件提供了紧凑的尺寸，使其能轻松集成到各种PCB（印刷电路板）设计中。这种封装的设计不仅节省空间，还降低了整体的生产成本。
应用领域
UT3N06G-AE3-R的设计使其广泛应用于以下领域：
电源管理：作为电源开关，它可以有效控制电源的输出，保障电路安全、节能，提高系统的整体效率。
开关电路：该MOSFET可以在开关电路中作为开关元件，快速开启和关闭，适合应用于LED驱动、电机控制等场景。
信号放大：其特性使得UT3N06G-AE3-R能作为信号放大的关键元件，在音频和射频（RF）应用中也能发挥出色的效果。
性能特点
高效性：UT3N06G-AE3-R具有低的开关损耗，提供高效的开关速度，能够有效降低内阻和提升散热性能，尤其适合高频率的应用场景。
优越的热稳定性：该型号的产品具有良好的散热性能，在长时间工作中仍能保持稳定的性能，不易过热，适合严苛的工作环境。
耐压性能：60V的耐压设计可支持更复杂的电路配置，减少由于电压冲击引起的损坏可能性。
小型化设计：由于其SOT-23封装，UT3N06G-AE3-R极为小巧，便于在各种便携式与嵌入式产品中被广泛应用。
结论
UT3N06G-AE3-R是一个性能卓越、用途广泛的N沟道MOSFET，凭借其高功率处理能力、优越的电压和电流规格、紧凑的封装方式，成为电源管理、开关电路及信号放大等领域优秀的解决方案。随着科技不断进步和小型化趋势的发展，UT3N06G-AE3-R必将在未来的电子产品设计中持续发挥重要作用。无论是在工业应用还是消费者电子产品中，UT3N06G-AE3-R都能够为设计师提供理想的动力与支持，是追求高性能的电路设计必不可少的核心元件之一。
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