WMSIC Electronic Components

UTC 2N60G-LC1-AA3-R 2N60G

Model2N60G-LC1-AA3-R
PackageSOT-223
BrandUTC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UTC 2N60G-LC1-AA3-R
Type
UTC
Minimum package
2500 卷

Technical parameters

Electronic Component
UTC
Electronic Component
2N60G-LC1-AA3-R
Electronic Component
1
Package
SOT-223
Type
N
Electronic Component
MOSFET
Electronic Component
0.246g
Electronic Component
1
Electronic Component
BM0209752052
Operating Temperature
40℃~+150℃
Power Dissipation(Pd)
2.3W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
600V
Capacitor(Ciss)
285pF
Output Capacitor(Coss)
30pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:2N60G-LC1-AA3-R 场效应管 (MOSFET)

概述

2N60G-LC1-AA3-R 是由 UTC(友顺)公司生产的一款高性能场效应管(MOSFET),封装形式为 SOT-223,这种封装结构使得其适用于多种电子应用,尤其是在空间受限的情况下,能够有效节省电路板空间。同时,凭借其出色的电气特性,2N60G-LC1-AA3-R 被广泛用于开关电源、电机驱动以及其它高频率开关应用中。

技术规格

  • 封装类型:SOT-223
  • 最大漏极源极电压 (V_DS):约60V,这使得该MOSFET非常适合于中等电压的电源管理和控制。
  • 最大漏极电流 (I_D):通常为10A,使其能够承受较大的负载电流,适用于功率放大和开关应用。
  • 开关速度:2N60G-LC1-AA3-R 的开关速度较快,能在高频应用中提供更高的效率和更少的能量损失。
  • 栅极阈值电压 (V_GS(th)):适中,通常在2V至4V之间,这使得其能够在较低的栅压驱动下开启,无需复杂的驱动电路。

主要特点

  1. 高效率: 2N60G-LC1-AA3-R 的设计使其在进行高频开关时损耗较低,适合用于高效率的电源转换电路,能够有效降低发热并提升系统的整体性能。

  2. 抗干扰能力强: 该MOSFET具有很好的抗干扰能力,能够在恶劣的工作环境下保证正常工作,提高系统的可靠性。

  3. 良好的热管理: SOT-223 封装具备较好的散热性能,适用于长时间连续工作,降低了因过热而导致的器件失效风险。

应用场景

2N60G-LC1-AA3-R 适用于多种电子电路和系统,包括但不限于:

  • 开关电源(SMPS): 由于其高电压和高电流特性,2N60G-LC1-AA3-R 可作为开关电源中的开关元件有效控制能量传输,提升电源转换效率。

  • 电机驱动: 在直流电动机和步进电机的驱动电路中,2N60G-LC1-AA3-R 可实现快速开关控制,保证电动机的响应速度和转矩输出。

  • LED驱动: 在LED照明应用中,2N60G-LC1-AA3-R 可用于PWM调光模式,提供高效稳定的驱动电流,提升LED的发光效率。

  • 电源管理系统: 在各种电子设备中,2N60G-LC1-AA3-R 也可以用于电源管理系统,帮助实现电源的开关和分配,提高系统的智能化和节能效果。

使用注意事项

在使用 2N60G-LC1-AA3-R 时需特别注意以下几点:

  • 适当的驱动电压:确保栅极的驱动电压在推荐的范围内,以避免因过高或过低的电压造成MOSFET损坏。

  • 热管理:在大电流应用中应合理设计散热方案,确保MOSFET在安全的温度下工作,避免过热。

  • 电流和电压的限制:在设计电路时,需确保工作在该传感器的最大电流和电压限制以内,以保持长期稳定运行。

结论

2N60G-LC1-AA3-R 是一款性能优越、应用广泛的MOSFET,凭借其优秀的电气性能和散热能力,适合用于各种要求高效能的电子应用中。其普遍适用的特性使得其能在多个行业中发挥关键作用,是设计师实现先进电子产品的理想选择。

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