WMSIC Electronic Components

UTC 2N80L-TN3-R 2N80L

Model2N80L-TN3-R
PackageTO-252-2(DPAK)
BrandUTC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UTC 2N80L-TN3-R
Type
UTC
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UTC
Electronic Component
2N80L-TN3-R
Electronic Component
1
Package
TO-252-2(DPAK)
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.504g
Electronic Component
1
Electronic Component
BM69418322
Power Dissipation(Pd)
43W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
800V
Capacitor(Ciss)
650pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:2N80L-TN3-R

基本信息: 2N80L-TN3-R是一款高性能的N沟道场效应管(MOSFET),由知名电子元器件制造商UTC(友顺)生产。该器件采用TO-252-2(DPAK)封装,具有良好的热管理性能和小型化设计,适合各种电源管理和开关应用。

主要参数:

  • 功率额定值:24W
  • 最大漏极-源极电压(V_DS):800V
  • 最大漏极电流(I_D):2.4A
  • 封装类型:TO-252-2(DPAK)

性能特点: 2N80L-TN3-R MOSFET的600V高电压能力适用于需要高电压操作的应用场合,例如电源转换、逆变器和电动机驱动电路。其最大漏极电流为2.4A,能够支持中等功率的电子设备,确保其在高功率工作环境中的稳定性。

MOSFET器件的N沟道结构使其在开关特性上表现优异,开通电阻(R_DS(on))低,意味着在导通状态下,其损耗较小,有助于提高系统的整体效率。2N80L-TN3-R在功率转换器和其他高效能应用中将提供更高的开关频率,有利于实现更为紧凑和高效的设计。

应用场景:

  1. 电力电子设备:由于其高电压和电流的能力,2N80L-TN3-R非常适合应用于电力电子转换器,如DC-DC转换器、DC-AC逆变器等场合。

  2. 电动机驱动:在电动机驱动应用中,MOSFET可用于H桥电路,驱动直流电动机(DC Motor)或步进电动机(Stepper Motor),提供高效的功率控制与切换。

  3. LED驱动电路:适合用作LED照明设计中的开关元件,尤其是在需要高功率和高亮度输出的LED场合,能够提供更好的开关响应和较低的热量积累。

  4. 交流电源开关:在需要快速开关和高效能的AC/DC电源适配器中,2N80L-TN3-R可作为开关元件,有助于减少开关损耗,提升能效。

  5. 电池管理系统:在储能系统和电池管理系统(BMS)中,2N80L-TN3-R可以用于电流监测和过载保护,确保系统的安全与稳定。

设计优势: 采用TO-252-2(DPAK)封装的2N80L-TN3-R器件具有较大的有效散热面,适合强制风冷或自然散热的系统设计。其封装设计能够有效降低热阻,提高热管理性能,延长使用寿命。同时,该元件与常见的PCB板布局兼容性良好,支持快速原型制作和批量生产。

总结: 2N80L-TN3-R N沟道MOSFET是一款高压、高性能电子器件,适用于各种高功率应用,为设计工程师提供多种选择。其优异的电气性能和可靠性使其成为电源转换、电动机驱动、LED照明等应用中的理想选择,能够满足现代电子设备对效率、紧凑性和功率的严格要求。

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