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UTC UT3N06G-AB3-R UT3N06G
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UTC UT3N06G-AB3-R
- Type
- UTC
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UTC
- Electronic Component
- UT3N06G-AB3-R
- Electronic Component
- 1
- Package
- SOT-89(SOT-89-3)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.144g
- Electronic Component
- 1
- Electronic Component
- BM0000641292
- Power Dissipation(Pd)
- 690mW
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 780pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：UT3N06G-AB3-R N沟道MOSFET
UT3N06G-AB3-R 是 UTC（友顺）公司生产的一款高性能 N沟道场效应管（MOSFET）。本器件在设计上专为高效能开关应用和电源管理解决方案而优化，具有690mW的功率耗散能力、60V的耐压范围以及3A的持续电流输出，能够广泛应用于各种电子设备和电源转换电路。
关键规格
封装类型：SOT-89-3
- 小型化的SOT-89封装设计使得UT3N06G-AB3-R在空间受限的应用中具有更好的适应性，同时也便于批量生产和集成到电路中。
电压和电流：
- 最大漏-源电压 (V_DS)：60V
- 最大连续漏电流 (I_D)：3A
- 这些参数使得此MOSFET可以承受高电压和电流应用，在电源管理、逆变器和电机驱动等场合表现出色。
功率耗散能力：690mW
- 此款MOSFET设计时考虑了热管理因素，690mW的功率耗散能力能够有效减少在通断时的功率损耗，提高电路的整体效率。
性能特点
高开关速度：UT3N06G-AB3-R具有极小的门极电荷 (Q_g)，意味着其在开关电源和高频率应用中表现出色，能够支持快速切换，进而提升性能和效率。
优秀的热性能：由于其小巧的封装和高效能的设计，能够最大化热量的排放，降低器件过热的风险，从而保证长期可靠的工作。
耐压能力：当电路需要面对瞬态过压情况时，UT3N06G-AB3-R的高耐压能力提供了额外的安全系数，确保系统稳定性。
应用领域
由于其出色的电性能和适用性，UT3N06G-AB3-R可广泛应用于以下领域：
电源管理：
- 用于开关电源、线性电源与LED驱动等多种电源转换电路中，以优化效率和降低能量损耗。
电机控制：
- 适用于DC电机驱动、步进电机及无刷电机的控制，与微控制器或PWM信号相结合，实现精确控制。
自动化设备：
- 在各种自动化系统、工业控制器及机器人中，UT3N06G-AB3-R能够帮助实现高效稳定的信号控制。
消费电子：
- 常用于家电、智能手机、平板电脑及其他便携式设备中，作为高效能开关元件，提升产品的综合性价比。
结论
总之，UT3N06G-AB3-R N沟道MOSFET凭借其优良的电气参数、出色的开关特性以及稳健的热管理能力，使其成为现今电子设计中不可或缺的重要器件之一。无论是在高效能功率转换、精确的电机控制，还是在各类消费电子产品中，都展现出其极大的适用性和价值。因此，对于设计工程师而言，UT3N06G-AB3-R无疑是实现高性能电路设计的理想选择。
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