WMSIC Electronic Components

UTC UTT18P10L-TN3-R UTT18P10L

ModelUTT18P10L-TN3-R
PackageTO-252-2(DPAK)
BrandUTC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UTC UTT18P10L-TN3-R
Type
UTC
Minimum package
2500

Technical parameters

Electronic Component
UTC
Electronic Component
UTT18P10L-TN3-R
Electronic Component
1
Package
TO-252-2(DPAK)
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.504g
Electronic Component
1
Electronic Component
BM0222289491
Power Dissipation(Pd)
150W
Electronic Component
2500
Voltage(Vdss)
100V
Capacitor(Ciss)
1.4nF
Output Capacitor(Coss)
590pF
Gate (Qg)
61nC@10V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

UTT18P10L-TN3-R 产品概述

一、产品简介

UTT18P10L-TN3-R 是一款由友顺(UTC)生产的 P 沟道场效应管(MOSFET),其封装形式为 TO-252-2(DPAK)。该器件的额定功率为 150W,支持最大工作电压 100V 和最大电流 18A,广泛应用于电源管理、开关电路及放大器电路等领域。

二、主要规格

  • 型号: UTT18P10L-TN3-R
  • 类型: P 沟道 MOSFET
  • 额定功率: 150W
  • 最大电压: 100V
  • 最大电流: 18A
  • 封装: TO-252-2(DPAK)

三、产品特点

  1. 良好的热性能:UTT18P10L-TN3-R 采用的 TO-252-2 封装极大增大了散热表面积,保证了在高功率下的热管理,确保器件能够稳定工作。

  2. 高开关频率:此MOSFET具有较低的导通电阻和高开关速度,能够在高频率下稳定开关,提升电源转换效率,特别适合于高效 DC-DC 转换器应用。

  3. 高电流承载能力:18A 的峰值电流支持高负载需求,能够为电机驱动、功率放大和其他高功率应用提供稳定的电源。

  4. 抗干扰能力:P沟道设计可有效降低电路中可能出现的电气干扰,使得系统在不稳定环境下依然保持高效能。

  5. 多种应用:广泛用于开关电源、直流电机驱动、LED灯控制、高频逆变器等各种电子产品中。

四、应用场景

UTT18P10L-TN3-R 适用于多种场合,特别是在以下领域表现卓越:

  • 电源管理:该MOSFET在电源转换模块(如 DC-DC 转换器)中,可以有效提升系统效率,降低功耗,并保持设备长时间稳定工作。
  • 工业控制:在工业控制电路中,能够承受高负载并提供可靠的开关控制功能,合理使用有助于提高设备安全性和稳定性。
  • 汽车电子:在现代汽车中,该器件可用于电源调度、驱动电机和电气系统的切换,提升汽车电子系统的性能与可靠性。
  • 消费电子:智能家居和消费类电子产品中,该器件可用于LED驱动器和开关电源,能够提供高效能的电能管理。

五、市场前景

随着电子产品向高效能、低能耗方向发展,P沟道 MOSFET 作为关键的电源开关元件,市场需求不断增长。UTT18P10L-TN3-R 凭借其在高效能和高可靠性方面的优异表现,有望在未来的电子元器件市场中占据一席之地。

总的来说,UTT18P10L-TN3-R 是一款性能优异、适应性强的 P 沟道 MOSFET,凭借其出色的技术参数和多种应用前景,无论是在事业研发还是在实际应用中都具备极高的价值。

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