WMSIC Electronic Components

UTC 2SK508G-K51-AE3-R 2SK508G

Model2SK508G-K51-AE3-R
PackageSOT-23
BrandUTC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UTC 2SK508G-K51-AE3-R
Type
UTC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UTC
Electronic Component
2SK508G-K51-AE3-R
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Electronic Component
MOSFET(JFET)
Electronic Component
0.036g
FETType
N
Electronic Component
1
Electronic Component
BM0093186190
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000
Current(Idss)
50mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SK508G-K51-AE3-R 产品概述

品牌与封装

2SK508G-K51-AE3-R 是由UTC(友顺)电子公司生产的一款N沟道场效应晶体管(MOSFET),其封装形式为SOT-23。SOT-23 是一种小型的表面贴装封装,具有良好的热管理能力和较小的尺寸,非常适合在空间受限的电子电路中使用。

产品特性

  1. 类型: 作为一款N沟道MOSFET,2SK508G-K51-AE3-R 主要用于低电压和高效能的开关应用。MOSFET的结构使其具有较低的导通电阻,使其在高频率操作时表现良好。

  2. 导通电阻: 该型号的导通电阻通常非常低,能够有效降低功率损耗,提高能量转换效率,适合用于电源转换、电机控制及其他高效能电路。

  3. 电流和电压等级: 2SK508G-K51-AE3-R 电流和电压的工作范围设计得相对较宽,一般可在多个电流级别下正常工作,这使得它具有较强的适应性,能满足不同应用需求。

  4. 高开关速度: 该MOSFET具备较快的开关速度,这对于高频转换和脉冲调制技术非常重要,能够显著提升电路的响应速度和效率。

  5. 热特性: 由于其SOT-23封装的设计,2SK508G-K51-AE3-R能够在较高的温度下稳定工作,适合在恶劣的工作环境中使用。同时,该封装也便于散热,降低了因过热而导致的性能下降风险。

应用场景

2SK508G-K51-AE3-R 适用于多种应用场景,主要包括但不限于:

  1. 开关电源: 在DC-DC преобразования 中,MOSFET被广泛用作开关元件,可有效提升电源转换的效率。

  2. 电机驱动: 在电动机控制电路中,MOSFET能够快速开启和关闭,为电机提供高效的控制,适合用在电动工具、家用电器及工业自动化设备中。

  3. 信号放大: 作为线性放大器的一部分,N沟道MOSFET能够在适当的工作区域内进行信号调制,广泛应用于音频设备及传感器。

  4. 充电和放电电路: 在电池管理系统中,MOSFET能够实现对电池的高效充电与放电,帮助提高电池的使用寿命及性能。

  5. LED驱动电路: 由于其快速开关特性和高效率,该MOSFET在LED驱动电路中也得到了广泛应用,有效降低了功率损耗并提高了灯具的亮度。

总结

2SK508G-K51-AE3-R作为一款性能优异的N沟道MOSFET,因其低导通电阻、高开关速度和广泛的工作电流电压范围而备受青睐,适合用于各类高效能与高频率的电子应用。其SOT-23封装不仅减小了电路的占用空间,还提供了良好的散热性能,是现代电子设计中不可或缺的重要元器件。随着对高效能、低功耗电子产品的日益增长的需求,2SK508G-K51-AE3-R将继续在各类应用中扮演重要角色。

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