WMSIC Electronic Components

UTC 2SD1816L-R-TN3-R 2SD1816L

Model2SD1816L-R-TN3-R
PackageTO-252-2(DPAK)
BrandUTC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UTC 2SD1816L-R-TN3-R
Type
TO-252-2(DPAK)
Minimum package
2500

Technical parameters

Electronic Component
UTC
Electronic Component
2SD1816L-R-TN3-R
Electronic Component
1
Package
TO-252-2(DPAK)
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.504g
Electronic Component
1
Electronic Component
BM0230897459
Transistor Type
NPN
Frequency(f T)
180MHz
Power Dissipation(Pd)
1W
Electronic Component
2500
Collector Current(Ic)
4A
Current (h FE)
100
Voltage(Vebo)
6V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SD1816L-R-TN3-R 产品概述

一、产品简介

2SD1816L-R-TN3-R 是 UTC(友顺)推出的一款大功率 NPN 双极型晶体管,面向通用功率开关和放大应用。该器件具有 100V 的集射极击穿电压和高达 4A 的持续集电极电流能力,配以 TO-252-2(DPAK)表面贴装封装,适合大批量自动化贴装和板载散热设计。典型应用包括开关电源、驱动电路、马达控制及功率放大器等。

二、主要电气参数(概要)

  • 晶体管类型:NPN
  • 最大集电极电流 (Ic):4A
  • 集射极击穿电压 (Vceo):100V
  • 最大功耗 (Pd):1W
  • 直流电流增益 (hFE):100 @ Ic=500mA, VCE=5V(典型)
  • 转换频率 (fT):180MHz(特征频率,适合中高速场合)
  • 集电极截止电流 (Icbo):1µA(典型)
  • 集电极饱和电压 (VCE(sat)):150mV(典型,具体测量条件见数据手册)
  • 射基极击穿电压 (Vebo):6V(注意:反向 VBE 限制较低)

三、关键特性与优势

  • 高耐压与中大电流能力:100V/4A 的电压电流规格使器件能胜任中等电压的功率开关与驱动任务。
  • 低饱和压降:典型 VCE(sat) 仅 150mV,有利于降低导通损耗,提升效率(在饱和状态下)。
  • 良好开关特性:fT=180MHz 表明此器件具备较快的开关速度,适用于中频率的开关电源和脉冲驱动。
  • 低漏电流:典型 Icbo=1µA,有利于降低静态损耗并提升待机性能。
  • 适配贴片工艺:TO-252-2 (DPAK) 封装便于表面贴装与自动化生产,散热可通过 PCB 铜箔扩展。

四、封装与热设计建议

  • 封装:TO-252-2 (DPAK),适合表面贴装,需参考厂家提供的焊盘尺寸与引脚排列图。
  • 散热注意:标称耗散功率 Pd=1W(请以数据手册为准),相对较低,实际可通过增加 PCB 铜箔面积和散热层、使用多层板接地/散热过孔来改善导热。若在接近最大 Ic 条件下长时间工作,建议采取外部散热或降低占空比以保护器件。
  • 焊盘设计:推荐在集电极及底部散热焊盘处使用较大铜面积并配合过孔,提升垂直散热性能。

五、典型应用场景

  • 开关电源(中功率)中的高侧/低侧开关管;
  • 电机驱动与继电器驱动电路(短时大电流驱动需注意热限);
  • 音频功放的驱动级或输出级(需考虑线性区工作与散热);
  • DC-DC 转换器、逆变器、负载开关等需要 100V 耐压与中等开关速度的场合。

六、使用注意事项

  • 反向基极电压限制:Vebo=6V,禁止将 BE 反向偏置超过该值,否则易造成基极击穿损坏。
  • 基极驱动:在开关应用中应确保合适的基极限流与驱动能力,避免基极过流或慢变换引起的过热;必要时采用基极电阻或驱动缓冲器。
  • Safe Operating Area:尽管 Ic 可达 4A,但在高 VCE 下功耗与结温限制会降低可持续电流,设计时应参考厂商 SOA 曲线并进行热仿真。
  • ESD 与装配:表面贴装器件在贴装与焊接过程中注意静电保护与推荐回流曲线,避免热应力或焊接缺陷影响可靠性。

七、结论与选型建议

2SD1816L-R-TN3-R 以其 100V/4A 的电气能力、较低饱和压降和中高速特性,适合需要兼顾耐压、导通损耗与开关性能的多种功率电子场合。设计时应重点关注散热与基极驱动策略,特别是在连续高电流或高 VCE 工作点下,合理的 PCB 散热布局和器件热管理是保证长期可靠性的关键。采购与最终设计前,建议参照 UTC 提供的完整数据手册,以获得精确的测试条件与额外电气/热参数。

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