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Vishay SI2301CDS-T1-GE3 MOSFET SI2301CDS
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- VISHAY SI2301CDS-T1-GE3
- Type
- SOT-23
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- VISHAY
- Electronic Component
- SI2301CDS-T1-GE3
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0000287268
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.6W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2301CDS-T1-GE3 产品概述
SI2301CDS-T1-GE3 是由 VISHAY（威世）制造的一款P沟道MOSFET（场效应管），其设计旨在满足广泛的功率管理应用需求。该器件具备高效能和可靠性，特别适用于低电压和中等功率的电路。以下是关于该器件的详细规格和应用场景介绍，帮助设计师和工程师更好地理解其特性及优势。
1. 基本参数与功能
SI2301CDS-T1-GE3 的主要参数包括：
- 漏源电压 (Vdss): 20V
- 最大连续漏极电流 (Id): 3.1A（在25°C环境温度下）
- 最大功率耗散: 860mW（在25°C环境温度下）及1.6W（在晶体管结温Tc下）
- 栅源极阈值电压 (Vgs(th)): 1V @ 250µA
- 漏源导通电阻 (Rds(on)): 最小值为112mΩ @ 2.8A, 4.5V
- 工作温度范围: -55°C ~ 150°C（结温TJ）
该 MOSFET 的设计通过使用先进的金属氧化物技术，实现了低导通电阻，能够有效降低开关损耗并优化功率效率。这使得 SI2301CDS-T1-GE3 在开关电源、DC-DC 转换器以及电机驱动等应用中更加高效。
2. 封装和安装类型
SI2301CDS-T1-GE3 采用 SOT-23-3（TO-236） 封装，属于表面贴装型安装方式，这种紧凑的封装设计不仅节省了PCB面积，还支持高密度电路板设计。适合于要求高度集成和空间有限的便携设备和消费电子产品。
3. 性能优势
- 低功耗设计: 得益于其低 Rds(on)，该元器件在高电流应用下的功耗显著降低，从而提升系统整体能效。
- 可靠性高: SI2301CDS-T1-GE3 能在严酷环境下工作，最高支持 150°C的环境温度，适合于高温工业及汽车应用。
- 短路保护能力: 该 MOSFET 在设计时考虑到了过流保护，保障电路在短路或过载条件下的安全性。
4. 应用场景
SI2301CDS-T1-GE3 的应用范围非常广泛，以下几点是其主要的应用场所：
- 电源管理器件: 在开关电源、DC-DC转换电源上，该MOSFET的低导通电阻特性可显著提高转换效率。
- 电机驱动: 适合用于小型电机的驱动控制，尤其是在需要频繁切换和低噪声的场合。
- 便携电子设备: 由于其小巧的封装和高可靠性，使得该元器件在手机、平板等便携式电子产品中得到广泛应用。
- 汽车电子: 由于其能够承受高温和高压的优势，在汽车电子控制单元（ECU）和电动汽车领域也有良好表现。
5. 总结
作为一款高性能的P沟道MOSFET，SI2301CDS-T1-GE3 不仅在技术性能上满足了现代电子器件对能源效率和热管理的高要求，同时其小巧的封装和出色的温度特性，使其尤其适合用于多个领域，尤其是便携式设备和汽车电子。工程师和设计师可以利用其优越的特性，设计出更为高效和安全的电子产品。
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