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Vishay S1M-E3/61T Diode S1M-E3
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- VISHAY S1M-E3 / 61T
- Type
- VISHAY
- Unit
- Electronic Component
- Minimum package
- 1800 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- VISHAY
- Electronic Component
- S1M-E3/61T
- Electronic Component
- 1
- Package
- SMA(DO-214AC)
- Electronic Component
- General Purpose Diode
- Electronic Component
- 0.067g
- Electronic Component
- 1
- Electronic Component
- BM0257677467
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 1uA@1kV
- (Vf)
- 1.1V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S1M-E3/61T 产品概述
产品简介
S1M-E3/61T 是由著名电子元件制造商 VISHAY（威世）推出的一款高性能通用二极管。该产品设计用于广泛的电源整流和电路保护应用，凭借其卓越的电气性能和可靠性，适用于各种工业电子设备、消费电子、高频应用和汽车电子等领域。
主要特性
直流反向耐压（Vr）: S1M-E3/61T 提供高达1kV的直流反向耐压，适合高压应用环境，能够在极端条件下稳定工作。
平均整流电流（Io）: 本产品的平均整流电流为1A，使其能够满足低至中等功率的需求，适合应用于电源整流电路和电动机驱动电路等。
正向压降（Vf）: 在1A的负载电流下，S1M-E3/61T 的正向压降为1.1V，确保在使用时的能源损耗最小，提高系统的整体效率。
反向恢复时间和速度: 该二极管提供标准的恢复速度，其反向恢复时间（trr）为1.8µs，适合绝大多数整流和开关电源应用。
反向泄漏电流: 在1000V的反向电压下，反向泄漏电流仅为5µA，显示出良好的反向绝缘性能，极大地降低了电路故障的风险。
电容特性: 在4V和1MHz的条件下，S1M-E3/61T 具有12pF的电容值，适合需要较低电容特性的高频应用。
工作温度范围: 该产品的结温范围为-55°C至150°C，确保在各种工作环境中都能保持优异的性能和可靠性。
封装与安装: S1M-E3/61T 采用DO-214AC（SMA）封装，设计为表面贴装型，符合现代电子元件的小型化趋势，便于自动化贴装和提高生产效率。
应用领域
由于其优越的参数性能，S1M-E3/61T 通常用于以下应用领域：
- 电源整流: 在交流转直流的电源整流电路中，起到关键的整流作用。
- 电动机驱动: 适合用作直流电动机驱动电路中的保护二极管，防止反向电流对电路造成损害。
- 高频开关电源: 由于其快速的反向恢复特性，适宜于高频开关电源等高效能电源设计。
- 电路保护: 可用于各种数字电子产品中，为敏感元件提供可靠的过压保护。
结论
S1M-E3/61T 作为一款性能卓越的通用二极管，凭借其高反向耐压、低正向压降及优良的可靠性，成为广泛应用于现代电子电路的重要元器件。VISHAY（威世）所提供的高品质标准，确保了用户可在各种复杂环境中安心使用此产品，为电子设计过程提供了强有力的支持。无论是电源整流，还是高频应用，S1M-E3/61T 都是理想之选，为开发各种高效、可靠的电子设备奠定了基础。
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