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Vishay SS10PH10-M3/86A Diode SS10PH10
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- VISHAY SS10PH10-M3 / 86A
- Type
- VISHAY
- Unit
- Electronic Component
- Minimum package
- 1500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- VISHAY
- Electronic Component
- SS10PH10-M3/86A
- Electronic Component
- 1
- Package
- TO-277A
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.168g
- Electronic Component
- 1
- Electronic Component
- BM69417838
- Current
- 10A
- Diode
- 1
- Current(Ir)
- 300nA@100V
- (Vf)
- 800mV@10A
- Electronic Component
- 55℃~+175℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：SS10PH10-M3/86A
基本信息
SS10PH10-M3/86A 是一款由VISHAY（威世）推出的高性能肖特基二极管，专为需要高效率和低正向压降的电源管理应用而设计。其主要特点包括高反向电压承受能力、出色的快速恢复性能和广泛的工作温度范围，使其成为当代电子产品的理想选择。
产品特点
电气性能
- 正向电压（Vf）：该产品在10A时的正向电压为880mV，低正向压降使其在高电流应用中具有卓越的能量效率，减少了功耗和发热。
- 反向电压（Vr）：额定反向电压可达100V，适用于高电压需求的场合，可以有效防止电路中的反向电流问题。
- 反向泄漏电流：在100V时的反向泄漏电流仅为10µA，表明其在静态条件下的低漏电特性，能够进一步提高电源转换的效率，降低待机功耗。
速度与恢复
- 本产品具备快速恢复特性，恢复时间小于等于500ns，适合高频应用。其反向导通能力强大（>200mA），非常适合高频开关电源及其他需求快速响应的电路应用。
电容特性
- 在4V、1MHz频率下，具有270pF的电容，为进行高频信号传递和快速度开关提供良好的支持。这项特性使得SS10PH10-M3/86A 在高频工作环境中表现优异，能够有效减少信号衰减和失真。
耐温性
- 本产品的工作温度范围为-55°C至175°C，适用广泛的环境条件，能够在严苛的工业和消费电子应用中稳定运行。这种广泛的温度容忍度确保设备在各种环境下的可靠性，适应不同的应用需求。
封装与安装
- 该二极管采用TO-277A (SMPC)封装，具有表面贴装型特性。TO-277A封装的设计提升了散热性能和电路板的集成度，极大地方便了自动化生产线的应用。
应用场景
由于其优异的电气性能和广泛的工作条件，SS10PH10-M3/86A广泛应用于各类电源管理系统和电信设备。具体应用实例包括：
- 开关电源（SMPS）
- 直流电源转换器
- 高频整流电路
- 再生制动和电动机驱动电路
- LED照明驱动
在各类工业设备、计算机及数码产品中，SS10PH10-M3/86A均能提供高效和稳定的电源整流解决方案，为推动现代电子设备的可靠性和性能起到关键作用。
结论
凭借其卓越的低正向压降、快速恢复能力和宽广的工作温度范围，VISHAY SS10PH10-M3/86A肖特基二极管是当今电子设计中不可或缺的高效元件之一。无论是用于高电流、高频还是高温环境下的应用，这款二极管的设计都将为最终用户的产品提供稳定、可靠的性能。作为您电子电路设计的理想选择，SS10PH10-M3/86A将帮助您实现更高的能效，优化电路性能。
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