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Vishay SIA517DJ-T1-GE3 MOSFET SIA517DJ
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- VISHAY SIA517DJ-T1-GE3
- Type
- VISHAY
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- VISHAY
- Electronic Component
- SIA517DJ-T1-GE3
- Electronic Component
- 1
- Package
- PowerPAK-SC-70-6-Dual
- Electronic Component
- 1 N +1 P
- Type
- N +P
- Electronic Component
- MOSFET
- Electronic Component
- 0.1g
- Electronic Component
- 1
- Electronic Component
- BM0000287289
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 6.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：SIA517DJ-T1-GE3
产品概述
SIA517DJ-T1-GE3是由著名电子元器件制造商VISHAY（威世）推出的一款高性能MOSFET（场效应晶体管），配备了一个N沟道及一个P沟道的集成设计。这款MOSFET采用了先进的PowerPAK® SC-70-6双封装，具有优异的热性能和电气特性，十分适合用于多种高效能应用场景。
关键参数
SIA517DJ-T1-GE3的主要参数包括：
- 漏源电压（Vdss）: 最高可达12V，这使得它在低压应用中表现出色。
- 连续漏极电流（Id）: 在25°C时，最高可达到4.5A，能够满足大多数功率需求。
- 栅源阈值电压（Vgs(th)）: 最大值为1V @ 250μA，确保在逻辑电平驱动下可靠开启。
- 漏源导通电阻（Rds(on)）: 在5A和4.5V条件下，最大导通电阻为29mΩ，保证了低的功率损耗和优异的导通特性。
- 最大功率耗散: 达到6.5W，在提升效率的同时，也能够延长器件的工作寿命。
- 工作温度范围: 从-55°C到150°C，适应不同的环境条件，使其适合于汽车、工业控制和消费电子等领域。
应用领域
SIA517DJ-T1-GE3由于其优异的特性，能够广泛应用于多种电子设备中，包括但不限于：
- 电源管理: 适用于DC-DC转换器、开关电源和电池管理系统，通过其低导通电阻实现高效电能转换。
- 驱动电路: 在马达驱动和负载开关中，提供迅速的开关速度和低的功耗。
- 线性调节器: 由于低导通电阻和高功率耗散能力，能够用于高效的线性调节器设计。
- 信号切换: 除了功率应用，它还可以用于快速开关的信号处理电路中，以提高整体系统的效率。
封装与安装
SIA517DJ-T1-GE3采用了表面贴装型的PowerPAK® SC-70-6双封装，使其在PCB板上的占位面积较小，适合高密度设计。这种封装格式不仅利于灵活布局，还能在提高散热性能的同时，简化生产工艺，使其成为现代电子设备设计中的优选元件。
性能优势
- 低导通电阻: 29mΩ的导通电阻大大增强了功率转换效率，减少了热量产生，适用于长时间工作的设备。
- 快速开关能力: 最大的输入电容（Ciss）为500pF @ 6V，配合15nC的栅极电荷(Qg)，保证快速响应和高开关频率，是现代开关电源和信号处理应用的理想选择。
- 高温工作稳定性: 广泛的工作温度范围确保了在极端环境条件下依然能够稳定工作，减少系统故障率。
总结
总之，SIA517DJ-T1-GE3是一款高效、稳定且灵活应用的MOSFET，具备优良的电气性能和热管理特性，为各种现代电子设备提供了理想的解决方案。它在电源管理、驱动电路以及信号切换等多个领域都有着广泛的适应性，是电子设计工程师不可或缺的优质器件。选择VISHAY SIA517DJ-T1-GE3，您将体验到更高效能与更可靠性的电子设计。
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