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Vishay SI2347DS-T1-GE3 MOSFET SI2347DS
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- VISHAY SI2347DS-T1-GE3
- Type
- VISHAY
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- VISHAY
- Electronic Component
- SI2347DS-T1-GE3
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0000285481
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.7W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：SI2347DS-T1-GE3
概要： SI2347DS-T1-GE3 是一款高性能的 P 沟道MOSFET（场效应管），由知名电子元器件制造商 VISHAY（威世）生产。这一元件专为广泛的应用而设计，具有优异的电气特性，如较低的漏源导通电阻和宽广的工作温度范围，使其在多种电源管理、开关电源、马达驱动以及其他功率控制应用中表现出色。
关键特性：
- 漏源电压 (Vdss): 最高为 30V，允许在多种中低压应用下工作。
- 连续漏极电流 (Id): 在 25°C 时可承载高达 5A（Tc），使其适用于中等功率需求的电路。
- 栅源极阈值电压 (Vgs(th)): 2.5V @ 250µA，确保在较低驱动电压下即可实现良好的导通性能。
- 导通电阻 (Rds(on)): 42mΩ @ 3.8A, 10V 极大地降低了在工作时的功率损耗，提高了效率。
- 最大功率耗散: 1.7W（在25°C条件下），提供了良好的热管理性能，适应了边缘温度变化的环境。
应用领域： SI2347DS-T1-GE3 的广泛应用包括但不限于：
- 电源管理和开关电源设计
- 电动机驱动控制
- 嵌入式电源设计
- LCD 背光源调节
- DC-DC 转换器
电气特性详析： 这款MOSFET在其工作条件下表现出色。提供了根据不同的漏极电流（Id）和栅源电压（Vgs）下的导通电阻特性，表现出其在小信号和大信号应用中的灵活性。特别是在 10V 的驱动条件下，其低通阻抗保证了电流流动的高效性，适合高频开关等应用。
温度和结构： SI2347DS-T1-GE3 具备极为广泛的工作温度范围，由 -55°C 到 150°C，使其可以在严苛的环境条件下正常工作。此外，其采用的 SOT-23-3 封装形式，也是表面贴装（SMD）设计中较为常用的一种，有助于实现小型化设计并提高制造效率。
驱动特性： MOSFET 的栅极电荷（Qg）为 22nC @ 10V，表明在开关过程中，能极快地在栅极充电，适合高频应用环境。值较低的栅电荷与较低的驱动电流相结合，使得使用该器件时对驱动电路要求相对降低。
封装与供应： 该产品采用 SOT-23-3 封装，封装小巧且便于焊接，适合现代电子产品的设计需求。其质量可靠，在多个地方能满足采购需求。
总结： SI2347DS-T1-GE3 是一款特性优越、适用范围广泛的 P 沟道 MOSFET，凭借其合适的工作参数与出色的电气性能，在现代电子产品的设计中成为一款不可或缺的元件。无论是在电源管理、马达控制还是信号处理等应用场景中，该器件均能够有效提升系统的整体性能，确保产品的可靠性与效率。对于追求高效能电子系统的设计师而言，SI2347DS-T1-GE3 显然是一个理想的选择。
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