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Vishay US1M-E3/5AT Diode US1M
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VISHAY US1M-E3 / 5AT
- Type
- VISHAY
- Minimum package
- 7500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VISHAY
- Electronic Component
- US1M-E3/5AT
- Electronic Component
- 1
- Package
- DO-214AC
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.11g
- Electronic Component
- 1
- Electronic Component
- BM0003120767
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 10uA
- (Vf)
- 1.7V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 7500
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：US1M-E3/5AT
概述
US1M-E3/5AT 是威世 (VISHAY) 旗下的一款高性能标准二极管，采用表面贴装型设计（SMT），在电路设计和布局中提供了高效空间利用与良好热管理。此款二极管以其强大的电气性能和广泛的应用范围而受到工程师和设计师的青睐。US1M-E3/5AT 适合在电源整流、电压钳位保护等多种应用中使用。
主要参数
- 最大直流反向电压 (Vr): 1000V
- 平均整流电流 (Io): 1A
- 正向电压 (Vf): 1.7V @ 1A
- 反向电流泄漏, Il: 10µA @ 1000V
- 反向恢复时间 (trr): 小于等于 75ns
- 工作温度范围: -55°C 至 150°C
- 封装类型: DO-214AC (SMA)
- 电容值: 10pF @ 4V，1MHz
应用领域
- 电源电路: US1M-E3/5AT 适用于开关电源和线性电源中的整流与保护电路。其高整流电流和反向电压能力能够满足大多数电源设计的需求。
- 电压钳位与浪涌保护: 该二极管可以用于限制电路中某些关键点的电压，防止过压现象对敏感元件造成损害，确保整体系统的稳定性与安全性。
- 电机驱动与控制: US1M-E3/5AT 可在电机驱动电路中提供有效的整流与二极管保护，使电机驱动方案更加稳定。
性能特点
- 快速恢复特性: 该型号的快速恢复时间小于等于 75ns，使其能够在高频率应用中正常工作。快速恢复特性避免了开关操作中的反向恢复损耗，有助于提高电源效率。
- 低反向漏电流: 反向漏电流低至 10µA，使得设备在待机状态下的能耗降至最低，适合低功耗设计。
- 宽工作温度范围: -55°C 至 150°C 的工作温度范围保证了该二极管在恶劣环境条件下的可靠性和稳定性。
封装与安装
US1M-E3/5AT 的 DO-214AC (SMA) 表面贴装型封装，适合自动化焊接设备和高密度电路板。其较小的占板空间使得设计人员能够在保持电路性能的同时，优化空间利用率。
总结
VISHAY 的 US1M-E3/5AT 是一款设计精良的标准二极管，凭借其优异的电气性能和可靠的工作稳定性，广泛应用于电源整流、过压保护以及电机驱动等领域。其高达1000V的反向电压能力和1A的平均整流电流，使其适合各种高压、高功率的应用。同时，表面贴装型的封装设计，使得产品在现代电子设备中更具适应性，能够满足严苛的工业标准与温度要求。
如果您正在寻找一种强大而灵活的二极管解决方案，US1M-E3/5AT 无疑是您理想的选择。其组合的高性能和可靠性，将在日常使用中为您的项目提供持久和稳定的支持。
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