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VISHAY SI2342DS-T1-GE3 SI2342DS
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- VISHAY SI2342DS-T1-GE3
- Type
- VISHAY
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- VISHAY
- Electronic Component
- SI2342DS-T1-GE3
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0000000578
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2342DS-T1-GE3 产品概述
一、基本信息
SI2342DS-T1-GE3 是由 VISHAY（威世）推出的一款高性能 N 沟道 MOSFET，采用了高效的金属氧化物半导体技术。其主要特点包括额定漏源电压为 8V，持续漏极电流为 6A，功率耗散能力为 2.5W，尤其适用于低功耗和高频应用场景，如开关电源、DC-DC 转换器、负载开关等。
二、技术参数
漏源电压（Vdss）: SI2342DS-T1-GE3 的绝对最大漏源电压为 8V，适合低电压操作，能够在多种电子设备中灵活应用。
连续漏极电流（Id）: 在 25°C 环境温度下，该器件能连续提供 6A 的漏极电流（Tc），为许多电路提供必要的功率支持。
栅源极阈值电压（Vgs(th)）: 栅源阈值电压为 800mV（@ 250µA），这确保了 MOSFET 在低电压驱动器信号下也能有效地进入导通状态，提高了在逻辑电平上的兼容性。
漏源导通电阻（Rds(on)）: 该器件在 7.2A 时的导通电阻极低，仅为 17mΩ（@ 4.5V），显示出其优异的导电性能，能够有效降低功耗和热量产生。
栅极电荷（Qg）: 该 MOSFET 的栅极电荷为 15.8nC（@ 4.5V），在高频开关应用中具有较低的栅驱动功耗。
输入电容（Ciss）: 在 4V 的情况下，其输入电容最大为 1070pF，确保了快速的开关特性。
工作温度范围: SI2342DS-T1-GE3 支持的工作温度范围为 -55°C 至 150°C（TJ），使其能够在严苛环境条件下顺利工作。
功率耗散: 设备最大功率耗散为 2.5W（@ Tc），提供了额外的安全裕度以应对不同工作条件。
封装类型: SI2342DS-T1-GE3 采用表面贴装型封装SOT-23，符合现代电子设备对小型化、轻量化的需求。
三、应用场景
SI2342DS-T1-GE3 的设计使其非常适合在多种电子应用中使用，典型应用包括：
- 开关电源: MOSFET 在开关电源中被广泛使用，以实现高效率的电能转换。
- DC-DC 转换器: 其低导通电阻和高电流承载能力使其非常适合用于各类 DC-DC 转换器中。
- 负载开关: SI2342DS-T1-GE3 也可用于负载开关，能够有效地控制电流的连续通断。
- 电机驱动器: 在小型电机驱动器中，可通过 MOSFET 实现高效的电源管理。
四、总结
作为一款优质的 N 沟道 MOSFET，SI2342DS-T1-GE3 结合了良好的电气性能与适应广泛应用的能力，是电子设计师在选择低电压、高效率的开关器件时的理想选择。凭借其可靠的工作特性与优良的热管理能力，该器件将在多种应用中发挥重要作用，有效提升整个电子系统的性能与安全性。
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