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VISHAY V1P6-M3/H V1P6
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- VISHAY V1P6-M3 / H
- Type
- VISHAY
- Minimum package
- 4500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- VISHAY
- Electronic Component
- V1P6-M3/H
- Electronic Component
- 1
- Package
- MicroSMP(DO-219AD)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.02g
- Electronic Component
- 1
- Electronic Component
- BM0265596808
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 150uA@60V
- (Vf)
- 600mV@1A
- Electronic Component
- 40℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 4500
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
V1P6-M3/H 产品概述
一、主要特点
V1P6-M3/H 是 VISHAY（威世）推出的一款肖特基整流二极管，采用 MicroSMP (DO-219AD) 封装。其典型性能包括：正向压降 Vf = 600 mV @ 1 A、直流反向耐压 Vr = 60 V、额定整流电流 1 A、反向漏电流 Ir = 150 μA @ 60 V、非重复峰值浪涌电流 Ifsm = 25 A。工作结温范围宽，-40 ℃ 至 +150 ℃，适合多种功率与保护场合。
二、典型电气性能说明
作为肖特基二极管，V1P6-M3/H 提供相对较低的正向压降与快速的开关特性，有利于降低整流损耗和改善效率。600 mV @ 1 A 的 Vf 表明在中等电流下功耗可控；60 V 反向耐压使其可用于中低压电源和开关应用。反向漏电在高压下为 150 μA，需在高温或高阻状态下考虑其影响。
三、封装与热性能
MicroSMP (DO-219AD) 小型表面贴装封装便于高密度 PCB 布局。尽管封装体积小，但若要求持续 1 A 工作，应关注热阻与散热路径：建议采用加大焊盘、分散热铜箔和必要时过孔散热，以维持结温在安全范围内并延长寿命。
四、典型应用
- 开关电源二次侧整流与续流二极管
- 输入极性保护与反接保护电路
- 低压 DC-DC 转换器与降压模块
- 汽车电子、家电及工业控制中的低功耗整流与保护
五、设计与布局要点
为发挥最低损耗与良好热性能，应将二极管尽可能靠近负载或开关节点，最短最宽的走线以降低寄生电阻；为应对峰值浪涌，PCB 上应保留足够的铜面积并考虑浪涌吸收或限流措施。高温环境下需评估反向漏电对系统静态功耗的影响。
六、可靠性与选型建议
V1P6-M3/H 在正常工作条件下适合长期可靠运行，但在高温、高压或频繁冲击的场合，应结合 Ifsm、功耗和结温计算余量；若需要更低漏电或更高耐压，可参考同系列或替代型号。欲获取完整典型曲线和封装尺寸，请查阅 VISHAY 官方 Datasheet 或联系供应商。
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