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VISHAY SUD25N15-52-E3 SUD25N15
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- VISHAY SUD25N15-52-E3
- Type
- VISHAY
- Unit
- Electronic Component
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- VISHAY
- Electronic Component
- SUD25N15-52-E3
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.382g
- Electronic Component
- 1
- Electronic Component
- BM0000284342
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 136W
- Electronic Component
- Electronic Component
- Electronic Component
- 2000
- Voltage(Vdss)
- 150V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SUD25N15-52-E3 产品概述
产品简介
SUD25N15-52-E3 是一款由著名电子元器件制造商 VISHAY（威世）生产的 N 沟道 MOSFET（场效应管），该产品专为高效能电源开关和信号放大等应用而设计。产品具有较高的电压和电流承载能力，适合在严苛的环境下操作，广泛应用于开关电源、DC-DC 转换器、马达驱动器和其他需要高频开关能力的场合。
关键参数
本产品的主要电气特性包括以下几点：
- 漏源电压 (Vdss)：最高可达 150V，这意味着它能够处理高电压应用，适用于大多数中等电压的电子设备。
- 连续漏极电流 (Id)：在 25°C 的环境下连续漏极电流为 25A，且能承受温度至 175°C 的极限工作条件，显示了其优秀的热管理能力。
- 栅源极阈值电压 (Vgs(th))：当栅极电流为 250μA 时，阈值电压为 4V，便于选择合适的驱动电压进行开关控制。
- 漏源导通电阻 (Rds(on))：在 5A 和 10V 的条件下，仅为 52mΩ，这一低导通电阻有助于减少功率损耗，提高效率。
- 最大功率耗散：产品在 25°C 时可 dissipate 3W，而经过适当的热管理后可以在更高的温度下达到 136W，这对于高功率应用尤为重要。
驱动及电容特性
SUD25N15-52-E3 的栅极驱动电压为最小 6V 和最大 10V，从而具备灵活的驱动能力，支持多种控制逻辑。同时，其栅极电荷（Qg）在 10V 下为 40nC，表明其在切换时的控制要求适中，有助于降低驱动电路所需的功耗。该 MOSFET 的输入电容 (Ciss) 在 25V 处最大为 1725pF，确保其在高频操作中的良好响应能力。
温度范围和封装
SUD25N15-52-E3 具备宽广的工作温度范围，从 -55°C 到 175°C，意味着该元器件可适应极端的环境条件。其安装类型为表面贴装型（SMD），并采用 TO-252（D-Pak）封装，方便与各种电路板兼容，尤其是在空间受限的设计中。
应用领域
凭借其高性能参数，SUD25N15-52-E3 特别适用于以下应用：
- 开关电源：适合用于高效能的开关电源设计，减少功率损耗和发热，提高整体效率。
- DC-DC 转换器：在升压和降压转换器中，利用其低导通电阻，降低能量损失。
- 马达驱动器：适合于高电流的马达驱动应用，确保平稳的控制。
- 汽车电子：能够在高温条件下稳定工作，适用于汽车中控制系统的设计。
结语
SUD25N15-52-E3 是一款综合性能优越的 N 沟道 MOSFET，结合了高电流承载能力、低导通电阻以及宽温范围，适用于各类严苛的电子应用。其可靠性和性能使其成为设计师在选择高效能电子元器件时的重要首选。选择 SUD25N15-52-E3，可以显著提高电子系统的整体效能与稳定性，助力实现高效能和低能耗的电源解决方案。
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