WMSIC Electronic Components

VISHAY IRF830PBF

ModelIRF830PBF
PackageTO-220AB
BrandVISHAY
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
VISHAY IRF830PBF
Type
VISHAY
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
VISHAY
Electronic Component
IRF830PBF
Electronic Component
1
Package
TO-220AB
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
2.75g
Electronic Component
1
Electronic Component
BM0000282794
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
74W
Electronic Component
Electronic Component
Electronic Component
1000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRF830PBF 产品概述

IRF830PBF是一款高性能的N沟道MOSFET,专为电源管理应用而设计,具有不俗的电气性能和可靠性。这款MOSFET由著名的全球电子元器件制造商VISHAY(威世)出品,采用TO-220AB封装,适用于广泛的电子电路和行业应用。以下是其详细的产品特性和应用分析。

1. 基本参数

  • 漏源电压(Vdss): IRF830PBF的漏源电压为500V,能够处理高电压应用,适合中高压电源电路。
  • 连续漏极电流(Id): 在25°C环境温度下,其连续漏极电流可达4.5A,支持多种电流需求的场景。
  • 栅源极阈值电压(Vgs(th)): 栅源极阈值电压为4V @ 250µA,表明在相对较低的栅电压下,这款MOSFET就能有效导通,适合低驱动电压的电路设计。
  • 漏源导通电阻(Rds(on)): 在2.7A、10V时的导通电阻值为1.5Ω,意味着在高电流下具有较低的功率损失,提升整体效能。
  • 功率耗散: 最大功率耗散为74W,使其在高负载情况下的使用毫无顾虑。
  • 工作温度范围: 该元件的工作温度范围广泛,支持-55°C至150°C的应用条件,适合苛刻的环境。

2. 电气性能

IRF830PBF拥有卓越的电气性能,其栅极电荷(Qg)最大值为38nC @ 10V,这一低值让其能够在较短的时间内快速切换,有效提升开关频率。此外,该元件的输入电容(Ciss)在25V下最大为610pF,显示出在高频操作时的良好响应能力。

3. 封装与安装

IRF830PBF采用TO-220AB封装,这种封装形式不仅提供了较好的散热性能,还便于散热器的安装,适合高功率应用。TO-220AB的安装方式为通孔,便于在电路板快速组装和更换。

4. 应用场景

凭借其高电压、高电流及优越的导通性能,IRF830PBF被广泛应用于以下领域:

  • 开关电源: 在DC-DC转换器和AC-DC电源中,IRF830PBF能有效转化和控制电能流动。
  • 电机控制: 在电动机驱动中使用,能够快速开关电流,提升电机的效率和反应速度。
  • 电池管理: 适于在各种可再充电电池组中进行能量管理。
  • 焊接设备: 在需要高电流和高电压的焊接场合,IRF830PBF表现出色。

5. 结论

IRF830PBF是一款兼具高稳定性和高效率的N沟道MOSFET,适合多种高压电源及开关应用。凭借其卓越的电气特性和广泛的应用场景,IRF830PBF mens在当今电子行业中具备极高的价值。VISHAY(威世)凭借其长期的行业经验和对品质的严格把控,使得IRF830PBF产品成为众多设计工程师及开发者的重要选择,能够满足各种复杂电路的需求,是一个值得信赖的电子元器件。

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