WMSIC Electronic Components

VISHAY IRF740PBF

ModelIRF740PBF
PackageTO-220AB
BrandVISHAY
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
VISHAY IRF740PBF
Type
VISHAY
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
VISHAY
Electronic Component
IRF740PBF
Electronic Component
1
Package
TO-220AB
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
2.64g
Electronic Component
1
Electronic Component
BM0258624398
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
125W
Electronic Component
Electronic Component
Electronic Component
1000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRF740PBF 产品概述

产品简介

IRF740PBF 是一款高性能的 N 沟道 MOSFET,专为需要高电压和大电流应用而设计。它具备 400V 的漏源电压 (Vdss) 和 10A 的连续漏极电流 (Id),非常适合用于电源转换、开关电源、逆变器等应用。其出色的功率耗散能力 (125W) 和设计适用的广泛工作温度范围 (-55°C 至 150°C) 使得 IRF740PBF 在极端条件下也能稳定工作。

主要特性

  1. 高电压和大电流:IRF740PBF 具备高达 400V 的漏源电压,以及在 25℃ 条件下可持续承受的 10A 漏极电流,使其在高压电路中表现优异。
  2. 低导通电阻:该 MOSFET 在 10V 的栅源电压下,6A 的耗电状态下,其泄漏电流的导通电阻(Rds(on))达到了 550mΩ,有助于降低功耗和热管理负担。
  3. 阈值电压:其栅源极阈值电压在 4V @ 250µA 处表现出色,确保了在较低栅源电压下即可启动,提高了电路的灵活性和兼容性。
  4. 栅极电荷 (Qg):在 10V 的栅源电压下,最大栅极电荷为 63nC,确保快速开关特性,对于高频应用尤为重要。
  5. 封装类型:IRF740PBF 采用 TO-220AB 封装,便于散热和安装,适合多种应用环境,更加提升了设备的可靠性。

工作环境

IRF740PBF 的工作温度范围由 -55°C 至 150°C,这使得它能够在严苛的环境条件下,如汽车、航空航天或工业控制等领域中使用,具有极佳的耐用性和灵活性。

应用场景

IRF740PBF 的应用涉及到多个高要求的领域,包括但不限于:

  • 开关电源:在 AC-DC 或 DC-DC 转换器中,以其高效能确保稳定输出。
  • 电动机驱动:通过控制电机状态,达到高效能与安全性,常用于电动车和各种工业机械。
  • 逆变器:作为太阳能逆变器或UPS系统中关键组件,IRF740PBF 可以转化电流以适应设备的需求。
  • 电源管理:在高效能电源管理系统中扮演核心角色,确保电流的稳定与安全。

总结

IRF740PBF 作为一款高电压、高性能的 N 沟道 MOSFET,凭借其出色的电气性能和极大的应用灵活性,成为现代电子设计中常用的选择。其高漏源电压、低导通电阻及宽工作温度范围使得它特别适合于要求严格的电气工程应用。无论是在开关电源、电动机控制还是在逆变器的应用中,IRF740PBF 都表现出了很高的可靠性和有效性,助力设计者构建高效、稳定的电子系统。

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