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产品概述:SI7465DP-T1-GE3
一、产品介绍 SI7465DP-T1-GE3 是一款由 VISHAY(威世电子)公司生产的高性能 P 通道 MOSFET,具有出色的电气特性和可靠的工作性能。它特别适用于面向高效能、低功耗和高温环境的电子应用。此款 MOSFET 采用 PowerPAK® SO-8 封装,便于表面贴装,适合现代电子设备的紧凑设计。
二、技术参数
安装类型:SI7465DP-T1-GE3 是一种表面贴装型 MOSFET,能够在狭小的电路板空间中提供高效能。
导通电阻:在 5A、10V 条件下,该器件的最大导通电阻(Rds On)为 64 毫欧。这一低导通电阻使其在导通状态下具有更低的功率损耗,提升系统效率。
驱动电压范围:该 MOSFET 在 4.5V 至 10V 的驱动电压下可获得最佳的 Rds On,满足用户在不同电压条件下的应用需求。
连续漏极电流:在额定温度 25°C 下,SI7465DP-T1-GE3 的连续漏极电流(Id)可达 3.2A,能够满足大部分中等功率的电子设备需求。
漏源电压:该器件的漏源电压(Vdss)最大可承受 60V,适用于多种高压应用场合。
功率耗散:在环境温度下,该 MOSFET 的功率耗散能力为 1.5W,确保其在高负荷工作情况下的稳定性和可靠性。
工作温度范围:SI7465DP-T1-GE3 的工作温度范围从 -55°C 至 150°C,使得它可以在严苛的温度环境中保持良好的性能表现。
栅极电荷:在 10V 的栅源电压下,其最大栅极电荷(Qg)为 40nC,有利于减少驱动电源的功耗,并提高开关速度。
阈值电压:在不同的漏极电流(Id)条件下,Vgs(th) 的最大值为 3V @ 250µA。这一参数确保了 MOSFET 能够在一定的栅源电压下快速导通,为设计提供了灵活性。
三、应用领域 SI7465DP-T1-GE3 广泛应用于多种电子领域,包括但不限于:
四、总结 SI7465DP-T1-GE3 结合了高效的电气特性与坚固的结构设计,适用于高要求的电子应用领域。凭借其优秀的工作温度范围、适中的功率耗散,以及低导通电阻等优势,使其成为设计现代电子产品时的理想选择。VISHAY(威世电子)作为知名的电子元器件制造商确定了其在市场中的竞争力,使其产品在业内广受欢迎。无论是高效电源管理、可靠的负载开关还是电机控制,SI7465DP-T1-GE3 都能为设计师提供所需的灵活性和稳定性。
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