WMSIC Electronic Components

VBsemi BSS308PE-VB BSS308PE

ModelBSS308PE-VB
PackageSOT-23(TO-236)
BrandVBSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
VBsemi BSS308PE-VB
Type
VBSEMI
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
VBSEMI
Electronic Component
BSS308PE-VB
Electronic Component
1
Package
SOT-23(TO-236)
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.047g
Electronic Component
1
Electronic Component
BM0228586621
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.5W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSS308PE-VB 产品概述

一、概述

BSS308PE-VB 是微碧半导体(VBsemi)推出的一款 P 沟道MOS场效应管,采用 SOT-23(TO-236)小封装,面向便携设备与小功率电源管理场景。该器件在低压、高效能开关和高侧开关应用中表现优良,适合空间受限且需控制功耗的电路设计。

二、主要电气参数

  • 漏源耐压 Vdss:30 V
  • 连续漏极电流 Id:5.6 A(封装与环境依赖)
  • 导通电阻 RDS(on):46 mΩ @ VGS=10 V, ID=4.4 A
  • 阈值电压 VGS(th):约 2 V
  • 耗散功率 Pd:2.5 W(SOT-23 封装,热设计需注意)
  • 总栅极电荷 Qg:24 nC @ 10 V(影响开关损耗)
  • 输入电容 Ciss:1.295 nF @ 15 V
  • 输出电容 Coss:150 pF
  • 反向传输电容 Crss:130 pF
  • 工作结温范围 Tj:-55 ℃ ~ +150 ℃

以上参数体现了器件在静态导通损耗与动态开关性能之间的平衡,适合中等电流、较高频率的功率切换。

三、典型应用场景

  • 电池供电设备的高侧开关与电源路径管理
  • 便携式消费电子的负载开关与省电控制
  • 反向极性保护与电源切换(需配合适当电路)
  • DC-DC 变换器中作为同步开关或辅助开关(考虑驱动方式与损耗)

四、设计与使用建议

  • 驱动建议:作为 P 沟道器件,栅极相对源极需施加负向驱动以完全导通(例如将栅极拉低接地以开通连接到正电源的高侧)。在驱动电压接近规定值(10 V)时可达到标称 RDS(on) 性能。
  • 开关损耗:Qg 为 24 nC 和较大的 Ciss 表明在高频切换时栅极驱动能量与开关损耗不可忽视,应选择足够驱动能力的驱动电路或限频使用。
  • 热管理:封装 Pd=2.5 W 在实际 PCB 上受铜箔面积与散热条件限制,长时间大电流工作时需增大铜箔或采用并联/降额设计以避免过热。
  • 电路保护:建议在实际应用中加入软启动、限流或瞬态抑制元件,避免电压尖峰和击穿风险。

五、小结

BSS308PE-VB 在 SOT-23 小封装下提供了较低的导通阻抗和适中的开关特性,适合对体积和效率有要求的低压电源管理场景。设计时需重视栅极驱动、电磁兼容与热布线,以发挥其最佳性能。

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