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XNRUSEMI XR2010S
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- XNRUSEMI XR2010S
- Type
- SOP8
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- XNRUSEMI
- Electronic Component
- XR2010S
- Electronic Component
- 1
- Package
- SOP8
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.173g
- Electronic Component
- 1
- Electronic Component
- BM0264844054
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.25W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XR2010S 产品概述
XR2010S 是 XNRUSEMI（新锐）推出的一款高单元密度沟槽式 N 沟道 MOSFET，专为同步降压转换器及各类高效率开关电源设计优化，兼顾低导通损耗与可控开关特性。器件符合 RoHS 与绿色产品要求，100% 保证 EAS 并通过全功能可靠性认证，适合对空间、效率与可靠性有较高要求的商用与工业场合。
一、主要特性
- 类型：N 沟道沟槽式 MOSFET
- 最大漏源电压 Vdss：20 V
- 连续漏极电流 Id：8 A
- 导通电阻 RDS(on)：57 mΩ @ Vgs = 1.8 V（逻辑电平驱动特性良好）
- 栅极阈值电压 Vgs(th)：约 1.0 V
- 总栅极电荷 Qg：60 nC @ Vgs = 4.5 V（影响驱动功率与开关损耗）
- 输入电容 Ciss：700 pF，反向传输电容 Crss：105 pF
- 功耗 Pd（封装限值）：2.25 W
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：SOP8
二、典型应用场景
- 同步降压转换器（主开关或续流 MOSFET）
- DC-DC 电源模块与电源管理 IC 配套器件
- 电池供电设备与便携式电源系统
- 低压电机驱动、小功率开关负载控制
三、电气与热设计建议
- 由于 RDS(on) 在 Vgs = 1.8 V 时已较低，适合 2.5 V、3.3 V 系统中作为低侧或逻辑驱动场合使用；若用于更高开关频率或减小开关损耗，建议驱动电压提升至 4.5 V 以降低导通损耗（同时注意 Qg 增加带来的驱动能耗）。
- Qg = 60 nC 表明栅极驱动电流不可忽视，设计驱动器（或驱动 IC）时需预留足够峰值电流与能量以保证快速切换，减少开关过渡损耗。
- SOP8 封装热阻较金属封装更高，Pd = 2.25 W 为器件最大耗散能力，实际应用中应通过加大 PCB 铜箔面积、增加散热过孔与优化布局来降低结-焊盘温升，确保长期可靠性。
- Crss 与 Ciss 数值影响开关速度与电压摆率（dv/dt），在高频应用中可结合阻尼或驱动阻阻措以抑制振铃与 EMI。
四、优势与使用注意事项
- 优势：高单元密度沟槽工艺带来在低栅压下仍能保持良好导通电阻，适合体积受限且对效率有要求的电源系统；封装小巧，便于模块化集成。
- 注意事项：在并联使用时需考虑 RDS(on) 匹配与热均衡，避免因电流不均导致局部过热；在高边应用需配合合适的高侧栅驱动方案或使用升压驱动以保证充足栅压。
五、可靠性与合规性
XR2010S 完整通过全功能可靠性认证并符合 RoHS / 绿色产品规范，生产过程实施 100% EAS 保证，适合要求长期稳定性的工业与商用产品。请在样片验证阶段结合目标系统做热测试与开关损耗评估，以确定最优驱动与散热策略。
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