WMSIC Electronic Components

XLSEMI XL2011E1

ModelXL2011E1
PackageSOP-8
BrandXLSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XLSEMI XL2011E1
Type
XLSEMI
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XLSEMI
Electronic Component
XL2011E1
Electronic Component
1
Package
SOP-8
Electronic Component
DC-DC Power Supply IC
Electronic Component
0.267g
Electronic Component
1
Type
Electronic Component
Synchronous
Electronic Component
Electronic Component
BM0264549848
Operating Temperature
40℃~+125℃
Operating Voltage
8V~45V
Switching Frequency
150kHz
Electronic Component
Electronic Component
Output Voltage
5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XL2011E1 产品概述

一、产品简介

XL2011E1 是一款降压型(Buck)DC-DC 开关稳压芯片,适用于宽输入电压范围的中功率电源设计。芯片内置开关管,采用固定输出(5.0V)输出方式,最大输出电流可达 2.1A,开关频率为 150kHz,工作温度范围 -40℃ 至 +125℃,封装为 SOIC-8。由于输入电压范围宽(8V ~ 45V),该器件特别适合工业、汽车电子及通信等需要从高电压母线降压到稳定 5V 的场合。

二、主要特性

  • 功能类型:降压(Buck)型结电路
  • 输入电压:8V ~ 45V(宽输入范围,适应多种电源母线)
  • 输出电压:固定 5.0V
  • 输出电流:最大 2.1A(连续)
  • 开关频率:150kHz(固定)
  • 静态电流(Iq):约 4.7mA(无负载静态功耗)
  • 同步整流:否(采用外部肖特基/快恢复二极管)
  • 开关管:内置(简化外部功率器件选型)
  • 通道数:单路输出
  • 封装:SOIC-8
  • 工作温度:-40℃ ~ +125℃

三、典型应用场景

  • 工业控制系统:从 12V、24V 或更高母线转换为 5V 逻辑或控制电源
  • 汽车电子(符合电压范围与温度特性要求的子系统)
  • 通信设备、电源模块、嵌入式设备及仪器仪表等需要宽输入、稳压 5V 输出的应用

四、外部元件建议与设计要点

  1. 二极管(整流器)

    • 由于为非同步整流结构,需要在回路中使用外部二极管。建议选用反向耐压 ≥ 60V、连续正向电流 ≥ 3A、低正向压降的肖特基二极管(以保证在 45V 输入下有足够的耐压裕量并降低整流损耗)。
  2. 电感器(输出滤波)

    • 电感需能承受峰值电流并具有较低 DCR。根据开关频率 150kHz 与输出电流 2.1A,常用电感范围约 10µH ~ 47µH(具体取值随纹波电流和体积/效率平衡调整)。电感额定电流建议 ≥ 3A,以保证温升和磁饱和裕量。
  3. 输入/输出电容

    • 输入侧:推荐并联电解/铝电容(耐压 ≥ 63V)与陶瓷旁路(0.1µF ~ 1µF)以抑制开关瞬态与降低输入阻抗。输入电容值常见为 10µF ~ 47µF(低 ESR 优先)。
    • 输出侧:低 ESR 的陶瓷电容(如 22µF ~ 100µF)可降低输出电压纹波并提高瞬态响应。实际值需结合稳态纹波与负载瞬变要求确定。
  4. PCB 与布局

    • 将输入电容紧贴 VIN 与 GND 引脚布局,缩短高频回路路径;整流二极管、开关节点(SW)和电感间走线应尽量短且粗。建议为芯片散热增加铜箔面积或在底层布置散热平面,必要时增加过孔导热至内层/底层铜箔。

五、保护与可靠性

XL2011E1 在典型设计中常配合常见的保护功能(请以正式数据手册为准),例如:过流限制、热关断、欠压锁定等,以保证在短路、过载或过温条件下系统安全。但具体保护门限与响应行为应参阅厂商数据手册并在实际设计中进行验证。

六、热管理与效率考量

  • 由于器件为内置开关且非同步整流,整机效率受输入电压、负载电流与外部整流二极管的正向压降影响明显。在中等负载下,典型效率可达 80%~90%(实际值依具体电路与元件而异)。在高输入电压或高输出电流工况下,损耗会增加,应评估芯片功率耗散并通过增加 PCB 铜面积或散热路径降低结温。
  • 在高温或连续高负载工作条件下,建议进行热仿真并评估器件是否需降额使用或外加散热措施。

七、选型注意事项与工程建议

  • 确认实际工况下的最大输入电压及瞬态尖峰,确保外部整流二极管与输入电容耐压有足够裕度(常用 63V 以上元件)。
  • 依据负载纹波与瞬态响应要求选择电感与输出电容组合,并在样板上实测输出纹波、电磁干扰(EMI)与热性能。
  • 在最终设计前务必参照厂商正式数据手册获取详细引脚功能、典型应用电路、保护参数及推荐的 PCB 布局图。

XL2011E1 以其宽输入电压范围与内置开关的集成度,为需要从高母线降压到 5V 的中等功率应用提供了简单可靠的选择。合理的外围元件选型与良好的 PCB 布局是实现高效率与可靠运行的关键。

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