WMSIC Electronic Components

XTX XT25F16FDTIGT-S XT25F16FDTIGT

ModelXT25F16FDTIGT-S
PackageDFN-8(2x3)
BrandXTX
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XTX XT25F16FDTIGT-S
Type
XTX
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XTX
Electronic Component
XT25F16FDTIGT-S
Electronic Component
1
Package
DFN-8(2x3)
Electronic Component
NOR FLASH
Electronic Component
0.234g
Electronic Component
1
Electronic Component
BM0264982919
Electronic Component
16Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.3V~3.6V
Current
0.3uA
Interface Type
SPI
Electronic Component
100000
Clock Frequency(fc)
133MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XT25F16FDTIGT-S 产品概述

一、概述

XT25F16FDTIGT-S 是芯天下(XTX)推出的一款 16Mbit(2MByte)3.3V SPI NOR 闪存,支持 Quad I/O 提升读写吞吐。器件工作电压范围为 2.3V~3.6V,最高时钟频率 fc 可达 133MHz,适用于对读取速度与功耗有平衡需求的嵌入式系统与便携终端。

二、主要技术规格

  • 存储容量:16Mbit(2MByte)
  • 接口类型:SPI(支持 Quad I/O)
  • 时钟频率:最高 133MHz
  • 工作电压:2.3V ~ 3.6V(典型 3.3V)
  • 待机电流:0.3μA(超低待机)
  • 页写入时间 (Tpp):400μs
  • 块擦除时间 (tBE):120ms(32KB)、150ms(64KB)
  • 擦写寿命:100,000 次
  • 数据保留 (TDR):20 年
  • 工作温度:-40℃ ~ +85℃
  • 封装:DFN-8 (2×3)

三、功能特性

  • 硬件写保护(Hardware WP)与绝对写保护(Absolute WP),便于实现外部安全控制。
  • 写使能锁存(Write Enable Latch)与软件写保护(Software WP)机制,提供分层的数据写入防护。
  • 支持 Quad I/O 模式以提高连续读性能,适合快速引导与执行-in-place(XIP)场景。
  • 极低待机电流,适合电池供电或待机时间长的应用。

四、典型应用场景

  • MCU/MPU 固件存储与启动(Boot Flash)
  • 嵌入式系统代码与配置数据存储
  • 人机界面与消费类电子设备的资源文件(图像/音频)存储
  • 工业控制与物联网终端的可靠数据保存

五、系统设计与使用建议

  • 在高频工作(接近 133MHz)下注意 PCB 布线与阻抗匹配,缩短片内到处理器的信号线并加串联阻抗以抑制反射。
  • 使用去耦电容(靠近 VCC 引脚)以保障瞬态供电稳定。
  • 对需要写保护的场景,建议同时利用硬件 WP 与软件 WP,实现更高安全性;绝对写保护可用于关键区域防护。
  • 在执行擦写与页编程时遵循 tBE 与 Tpp 时间,避免频繁循环写入以延长器件寿命(寿命指标 100k 次)。
  • 若系统电压超出 2.3V~3.6V 范围,应增加电平转换或选择合适的电源管理方案。

六、封装与可靠性

DFN-8 (2×3) 小封装有利于节省 PCB 面积,适合空间受限的设计。器件具有 20 年数据保留能力和 100,000 次擦写耐久性,满足长期可靠性要求的工业与消费类产品。XT25F16FDTIGT-S 综合了高速读写、低功耗与多层写保护,是对可靠存储与系统安全有要求项目的良好选择。

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