WMSIC Electronic Components

XTX XT25F16FSOIGU-S XT25F16FSOIGU

ModelXT25F16FSOIGU-S
PackageSOP-8-150mil
BrandXTX
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
XTX XT25F16FSOIGU-S
Type
XTX
Minimum package
100 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
XTX
Electronic Component
XT25F16FSOIGU-S
Electronic Component
1
Package
SOP-8-150mil
Electronic Component
NOR FLASH
Electronic Component
0.206g
Electronic Component
1
Electronic Component
BM0264982915
Electronic Component
16Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.3V~3.6V
Current
0.3uA
Interface Type
SPI
Electronic Component
100000
Clock Frequency(fc)
133MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

XT25F16FSOIGU-S 产品概述

一、产品简介

XT25F16FSOIGU-S 是芯天下(XTX)推出的一款 16Mbit(2MByte)低功耗 SPI NOR 闪存芯片,支持 Quad I/O(四线 SPI)访问,最高时钟频率可达 133MHz。器件工作电压 2.3V~3.6V,采用 SOP-8-150mil 封装,适用于对容量、速度与工业级可靠性有要求的嵌入式存储方案。

二、主要特性

  • 存储容量:16Mbit(2MByte)。
  • 接口类型:SPI,支持 Quad I/O 提高数据吞吐率。
  • 时钟频率:最大工作频率 fc = 133MHz。
  • 供电电压:2.3V ~ 3.6V,兼容 3.3V 系统。
  • 低功耗:待机电流仅 0.3μA(典型)。
  • 写入保护机制:硬件写保护、绝对写保护、写使能锁存(WEL)、软件写保护(BP 位)。
  • 擦写寿命:可达 100,000 次(典型)。
  • 页写入时间(Tpp):400μs(典型)。
  • 数据保持时间(TDR):20 年(典型)。
  • 工作温度范围:-40℃ ~ +85℃。

三、电气与性能要点

XT25F16FSOIGU-S 在保证低功耗的同时,通过 Quad I/O 模式显著加快读写速度,适合程序代码、参数存储、固件升级、日志记录等场景。典型页写入时间 400μs,配合较高的时钟频率可在短时间内完成大数据量传输。器件在片上提供写使能锁存与软件保护位,外部还可通过硬件写保护实现更高安全性。

四、封装与可靠性

  • 封装:SOP-8-150mil,适合常规 PCB 手工贴装与自动化组装。
  • 可靠性:擦写寿命高达 100k 次,数据保存年限 20 年,适合工业级长期部署需求。
  • 温度范围:满足-40℃~+85℃ 的工温级别,适用温度环境宽广。

五、典型应用场景

  • 嵌入式系统固件存储与启动代码(Boot ROM)。
  • 工业控制器、仪器仪表的配置信息与日志存储。
  • 消费类电子设备的参数与固件升级。
  • 网络设备与通讯模块的非易失性存储。

六、设计与使用建议

  • 核心电源 VCC 端建议附近放置 0.1μF 陶瓷去耦电容以保证供电稳定。
  • 不使用写入或需最高保护时,建议启用硬件写保护/绝对写保护功能并通过外部引脚妥善固定。
  • 对于高频 Quad I/O 模式,PCB 信号线应保持阻抗匹配并缩短走线,避免串扰。
  • 在大容量擦写或频繁写入的应用中,可结合 wear-leveling 或日志轮换策略延长使用寿命。

XT25F16FSOIGU-S 以其小封装、低电流、高可靠性和多种写保护手段,适合对性能与安全有较高要求的嵌入式存储需求。若需详细时序图、指令集或典型应用电路图,请参考芯天下提供的完整数据手册。

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