WMSIC Electronic Components

AO3401A

ModelAO3401A
PackageSOT-23
BrandYONGYUTAI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
YONGYUTAI AO3401A
Type
YONGYUTAI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
YONGYUTAI
Electronic Component
AO3401A
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.034g
Electronic Component
1
Electronic Component
BM0264770665
Operating Temperature
55℃~+150℃
Gate Voltage(Vgs)
±12V
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AO3401A(YONGYUTAI)产品概述

一、产品简介

AO3401A 是永裕泰(YONGYUTAI)生产的一款 P 沟道增强型 MOSFET,SOT-23 封装,适用于高侧开关、小功率电源管理与便携设备保护电路。器件额定漏源电压为 30V,工作温度范围宽(-55℃ 至 +150℃),兼顾耐压与可靠性。

二、主要技术参数

  • 类型:P 沟道 MOSFET(增强型)
  • Vdss:30V
  • 连续漏极电流 Id:4A(理想条件下,受封装散热限制)
  • 导通电阻 RDS(on):45mΩ @ Vgs = 10V(典型)
  • 阈值电压 Vgs(th):约 0.9V(标称值,P 沟道为负向阈值,通常表示为 |Vgs(th)|)
  • 总栅极电荷 Qg:6.5nC
  • 输入电容 Ciss:553pF;反向传输电容 Crss:35pF;输出电容 Coss:57pF
  • 最大栅极电压:±12V
  • 封装:SOT-23

三、典型应用场景

  • 高侧电源开关与负载切换(12V 或更低电压系统)
  • 电源路径管理与反向电流保护(利用体二极管)
  • 电池供电设备的断电保护、外设开关控制
  • 需要小封装、较低导通损耗的便携式电源设计

四、使用要点与设计建议

  • 栅极驱动:P 沟道需使 Vgs 变负以导通,充分导通通常需要接近 -8 ~ -10V 的 Vgs;注意器件额定 ±12V 上下限。
  • 开关损耗与驱动电流:Qg=6.5nC,若开关频率为 100kHz,则平均驱动电流 I = Qg·f ≈ 0.65mA,峰值电流取决于驱动器能力与电阻。
  • 热设计:SOT-23 封装散热受限,4A 连续电流在实际 PCB 上会产生显著发热(例如 4A^2·45mΩ ≈ 0.72W),建议使用加宽铜箔、散热过孔并限制实际持续电流或进行热仿真。
  • 抗干扰:输入电容和 Crss 会造成米勒效应,快速切换时容易振荡,推荐在门极与栅极之间并联 10–100Ω 阻尼并部署合适的旁路电容。
  • ESD 与保护:门极对静电敏感,实际电路中可增加栅极电阻和 TVS 保护以提高可靠性。

五、封装与可靠性

SOT-23 小封装适合空间受限设计,但热阻较高,长期大电流工作需注意热沉和 PCB 散热布局;工作温度范围 -55℃ 至 +150℃ 满足大多数工业与消费类应用。

六、典型电路参考

  • 高侧开关:将 AO3401A 作为 P 沟道高侧场效应管,源接电源、漏接负载,通过拉低门极实现导通;
  • 反向电流阻断:利用体二极管配合 MOSFET 本体实现低损耗方向控制(需注意关断瞬态与二极管恢复)。

总结:AO3401A 在中低功率高侧开关与电源管理场合表现良好,关键在于合理的栅极驱动与热设计,以发挥其低 RDS(on) 与小体积优势。

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