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MJD127
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- YONGYUTAI MJD127
- Type
- YONGYUTAI
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- YONGYUTAI
- Electronic Component
- MJD127
- Electronic Component
- 1
- Package
- TO-252
- Type
- PNP
- Electronic Component
- Darlington Transistor
- Electronic Component
- 0.45g
- Electronic Component
- 1
- Electronic Component
- BM0264770648
- Power Dissipation(Pd)
- 1.75W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Collector Current(Ic)
- 3A
- Voltage(Vebo)
- 5V
- Collector-Emitter Breakdown Voltage(Vceo)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MJD127 产品概述
一、简介
MJD127（品牌：YONGYUTAI/永裕泰）为PNP型中功率晶体管，TO-252封装，适用于高压开关与放大场合。器件设计注重稳压耐压与中等电流处理能力，在需要100V耐压、低占板面积与便于散热的设计中具有较好性价比。
二、主要参数
- 类型：PNP
- 集—射极击穿电压 Vceo：100V
- 集电极电流 Ic：3A（脉冲或短时条件）
- 最大耗散功率 Pd：1.75W（无外加散热）
- 集电极截止电流 Icbo：200μA
- 集—射极饱和电压 VCE(sat)：2V @ Ic=3A, Ib=12mA（测试条件）
- 射—基极击穿电压 Vebo：5V
- 基—发射极导通电压 VBE(on)：≈2.5V
- 封装：TO-252
三、性能要点与设计提示
- 饱和条件下的测试数据显示 VCE(sat)=2V（Ic=3A, Ib=12mA），但在该电压与电流下器件瞬时耗散约6W，远大于标称Pd=1.75W。因此不得在无额外散热的情况下长期以此工况工作。
- 设计时应保证在工作电流下的VCE使器件耗散 Pd = VCE×Ic ≤ 1.75W；例如在Ic=3A时，VCE应≤≈0.58V（仅限无额外散热）。实际电路通常通过提升基极驱动以降低VCE或采用散热措施。
- 基极驱动：厂方测试基极电流为12mA，实际工程中可根据所需饱和度调整Ib（留有裕量，避免超驱导致过热）。注意Vebo=5V，禁止反向超过该电压以防基—射击穿。
四、典型应用
- 高侧开关与保护电路（PNP便于做正电源侧开关）
- 开关电源、功率放大、继电器/电磁阀驱动（短时大电流脉冲）
- 线性放大级、反相输出级（需考虑功耗与散热）
五、封装与热管理
TO-252（DPAK）结构利于PCB散热，建议：
- 在PCB上设计大面积铜箔散热垫并通过过孔连接多层散热层；
- 必要时在背部加散热片或用外接散热器；
- 安装与焊接时遵循厂家回流曲线，注意管脚与散热片的电气连接（常为集电极/散热片）。
六、选型与使用注意
- 在高压、高温或连续大电流场合优先考虑散热能力与安全裕度；
- 仔细核对管脚排列与散热片电气归属（可能为集电极）；
- 对于关键应用建议参照原厂完整数据手册进行热阻、极限参数与可靠性评估。
总结：MJD127适合需要100V耐压且占板面积受限的中功率场合，但在高电流工作时必须重视饱和电压造成的功耗并采取相应的散热与驱动策略。欲获取详细引脚信息与完整特性曲线，请参考永裕泰官方datasheet。
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