WMSIC Electronic Components

ZD24C1MA-MAGMT

ModelZD24C1MA-MAGMT
PackageDFN8 2x3x0.45mm
BrandZETTA
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Zetta ZD24C1MA-MAGMT
Type
ZETTA
Minimum package
3000 托盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ZETTA
Electronic Component
ZD24C1MA-MAGMT
Electronic Component
1
Package
DFN8 2x3x0.45mm
Electronic Component
EEPROM
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0264678842
Electronic Component
1Mbit
Operating Temperature
40℃~+105℃
Operating Voltage
1.7V~5.5V
Interface Type
I2C
Electronic Component
100
Clock Frequency(fc)
1MHz
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ZD24C1MA-MAGMT 产品概述

一、产品简介

ZD24C1MA-MAGMT 是澜智(Zetta)推出的一款高可靠性、超低功耗的串行 EEPROM,容量 1 Mbit(128 KiB),通过 I2C 兼容接口访问,最高支持 1 MHz 时钟。器件工作电压范围宽(1.7 V~5.5 V),工作温度覆盖工业级 -40℃ 至 +105℃,适合对数据长期保存和高耐久写入有要求的嵌入式系统应用。

二、主要规格与性能

  • 存储容量:1 Mbit(128 KiB)。
  • 接口类型:I2C 兼容,最高时钟频率 fc = 1 MHz(支持快速模式+)。
  • 写周期时间:Tw = 5 ms(典型),在设计时需预留写完成等待时间。
  • 数据保持:TDR = 100 年(典型)——适合长期保存配置与校准数据。
  • 写入寿命:100 万次擦写周期,适合高频写入场景。
  • 功能特性:硬件写保护(WP 引脚)与输入噪声抑制功能,可降低总线毛刺误触发风险。
  • 工作电压:1.7 V ~ 5.5 V;工作温度:-40℃ ~ +105℃。

三、封装与电气接口

器件采用 UDFN-8L-EP(DFN8)小型封装,外形尺寸 2.0 × 3.0 × 0.45 mm,底部带散热/接地焊盘,适合贴片工艺与空间受限的产品设计。I2C 总线需配合适当的上拉电阻,推荐根据总线容量与速率选择合适阻值(高速时取较小阻值以保证上升时间)。

四、典型应用场景

  • 工业控制与自动化:设备校准参数、配置表、历史记录存储。
  • 物联网终端与传感节点:低功耗数据记录、设备唯一配置、固件参数存储。
  • 工业与医疗测量仪器:长期校准与追溯数据保存。
  • 消费类与便携设备:用户设置、日志与安全密钥等需要长期保持的数据。

五、设计与使用建议

  • 写保护:对关键数据建议接入 WP 引脚并在不需要写入时拉低/拉高(依规格)以防止误写。
  • 写入管理:尽管支持 100 万次写入,仍建议通过写缓冲、延迟合并或轮换策略降低不必要写入,延长系统寿命。
  • 总线完整性:启用器件的噪声抑制功能并在 PCB 设计中注意信号线走向与去耦电容,以降低总线毛刺与 EMI 影响。
  • 电源与序列:加装旁路电容(如 0.1 µF)于 VCC 与 GND,确保上电/断电时序稳定,避免写入中断导致的数据损坏。
  • 时序与等待:每次写操作后遵循 Tw = 5 ms 的写完成时间,或通过读/ACK 检测写完成状态以提高效率。

六、小结

ZD24C1MA-MAGMT 以其宽电压、宽温度、超长期数据保持与高写入耐久性,配合硬件写保护与噪声抑制功能,适用于对可靠性和寿命有较高要求的嵌入式存储场景。其小型 DFN8 封装也便于空间受限的产品集成。若需深入的电气时序或封装资料,请参考澜智官方技术手册或联系授权分销商获取样片与评估板。

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