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ZD25LD40BEIGR
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Zetta ZD25LD40BEIGR
- Type
- ZETTA
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ZETTA
- Electronic Component
- ZD25LD40BEIGR
- Electronic Component
- 1
- Package
- USON-8(2x3)
- Electronic Component
- NOR FLASH
- Electronic Component
- 0.046g
- Electronic Component
- 1
- Features
- positions
- Electronic Component
- BM0264678798
- Electronic Component
- 4Mbit
- Operating Temperature
- 40℃~+85℃
- Operating Voltage
- 1.65V~2V
- Current
- 9uA
- Interface Type
- SPI
- Electronic Component
- 100000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ZD25LD40BEIGR 产品概述
一、产品简介
ZD25LD40BEIGR 是澜智（Zetta）推出的一款低压 SPI NOR Flash 存储器，容量 4 Mbit（512 KByte），工作电压范围 1.65 V 至 2.0 V，支持高达 85 MHz 的 SPI 时钟，封装为小型 USON-8 (2×3)。器件针对功耗敏感与空间受限的终端应用进行了优化，适合电池供电、便携和工业级场景。
二、主要电气与时序参数
- 存储容量：4 Mbit（512 KByte）
- 最高 SPI 时钟频率 (fc)：85 MHz
- 工作电压：1.65 V ~ 2.0 V
- 待机电流：9 μA（典型）
- 擦写寿命：100,000 次（典型）
- 写周期时间 (Tw)：8 ms
- 页写入时间 (Tpp)：1.6 ms
- 块擦除时间 (tBE)：10 ms
- 数据保留 (TDR)：20 年
- 工作温度：-40 ℃ ~ +85 ℃
三、功能特性与数据保护
器件支持多层写保护机制，包括硬件写保护、绝对写保护、写使能锁存（WEL）和软件写保护，同时内置上电复位功能，确保上电瞬态期间的数据与总线安全。此类保护组合便于在系统软件与硬件层面同时实施防误写及防篡改策略。
四、封装与可靠性
USON-8 (2×3) 小体积封装适合高密度系统板设计，减小 PCB 占用。器件经过高擦写寿命与长期数据保持（20 年）设计，适合对可靠性要求高的工业、物联网与消费类设备。
五、典型应用场景
- 物联网终端与传感器节点（低功耗、低压工作）
- 可穿戴设备与便携式终端（小封装、低待机）
- 工业控制与通信设备（宽温度范围、长期可靠）
- 固件存储、参数配置与引导代码（Boot ROM 扩展）
六、系统设计建议
- 供电与接口电平：主控器需支持 1.65–2.0 V 电平或使用双向电平移位器以兼容 3.3 V/5 V 主机。
- 去耦与电源完整性：在 VCC 近旁放置 0.1 μF 陶瓷去耦，靠近器件放置，减少供电噪声。
- SPI 布局与信号完整性：尽量缩短 SCLK/MOSI/MISO/CS 路径，必要时在输出线上加小阻尼电阻以抑制环回。
- 写保护策略：建议在系统中结合硬件 WP 与软件保护，以防止误写操作；在固件更新流程中明确写使能/擦除的时序控制。
- 热管理与可靠性：在高频操作或密集擦写情况下注意总体热量释放，维持器件在推荐工作温度范围内。
ZD25LD40BEIGR 以其低压、低功耗、小封装和完备的写保护功能，为需要可靠非易失性存储且受功耗与空间约束的应用提供了稳定且易于集成的解决方案。如需引脚分配、命令集或电气时序图，请参考澜智的详细数据手册以获得完整规范与典型应用电路。
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