WMSIC Electronic Components

SM3402SRL

ModelSM3402SRL
PackageSOT-23-3
BrandSPS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SPS SM3402SRL
Type
SPS
Minimum package
3000

Technical parameters

Electronic Component
SPS
Electronic Component
SM3402SRL
Electronic Component
1
Package
SOT-23-3
Electronic Component
1 N
Electronic Component
0.04g
Electronic Component
1
Electronic Component
BM0265847310
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.4W
Electronic Component
3000
Voltage(Vdss)
30V
Capacitor(Ciss)
286pF
Gate (Qg)
4.7nC@10V
Resistor(RDS(on))
45.5mΩ@10V
Voltage(Vgs(th))
1.5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SM3402SRL N沟道场效应管产品概述

SM3402SRL是美国源芯(SPS) 推出的一款30V耐压N沟道MOSFET,主打低导通损耗、快速开关特性与超小型封装,适配便携电子、小功率电源、工业控制等多场景需求。以下从核心参数、性能优势、应用场景及设计注意事项展开详细说明。

一、核心参数总览

SM3402SRL的关键参数聚焦“小功率高效”设计,具体分类如下:

1. 电性能核心参数

  • 耐压能力:漏源最大耐压 ( V_{DSS}=30V ),满足多数低电压电源系统(如5V/12V)的耐压需求;
  • 电流承载:连续漏极电流 ( I_D=4A ),可覆盖小功率负载(如2A~4A的便携设备供电);
  • 导通损耗:导通电阻 ( R_{DS(on)}=45.5mΩ )(( V_{GS}=10V )、( I_D=4A ) 条件下),是同类器件中较低水平,直接降低导通损耗;
  • 开关特性:栅极电荷 ( Q_g=4.7nC )(( V_{GS}=10V )),配合输入电容 ( C_{ISS}=286pF )、反向传输电容 ( C_{RSS}=21pF ),实现快速开关(支持数百kHz至数MHz频率);
  • 驱动兼容性:阈值电压 ( V_{GS(th)}=1.5V )(( I_D=250uA )),兼容3.3V、5V等常见控制电压,无需额外驱动电路。

2. 热学与环境参数

  • 功耗能力:最大功耗 ( P_d=1.4W ),满足小功率持续工作的散热需求;
  • 宽温范围:工作温度 ( -55℃ \sim +150℃ ),适配工业、车载等严苛环境(如户外传感器、车载USB充电)。

3. 封装与品牌

  • 封装形式:SOT-23-3超小型封装(尺寸约3×3mm),节省PCB空间,适合便携设备小型化设计;
  • 品牌背景:SPS(美国源芯)专注功率半导体领域,器件可靠性符合工业级标准。

二、关键性能优势

SM3402SRL的设计针对性解决“小功率场景的效率、空间与可靠性”痛点:

1. 低导通损耗,提升续航

45.5mΩ的低 ( R_{DS(on)} ) 使导通损耗显著降低:以4A工作电流为例,导通损耗仅为 ( I^2R=4^2×0.0455≈0.728W ),比同类器件(通常60mΩ以上)低20%以上,适合电池供电设备(如TWS耳机、充电宝)延长续航。

2. 快速开关,适配高频变换

4.7nC的低 ( Q_g ) 配合合理的电容参数,开关速度快,可支持1MHz以上开关频率,适配DC-DC降压/升压变换器(如5V→3.3V的小功率电源),减少开关损耗的同时缩小电感/电容体积。

3. 宽温可靠,覆盖严苛场景

-55℃~+150℃的工作温度范围,满足工业控制(如车间传感器节点)、车载辅助系统(如氛围灯控制)的环境要求;1.4W的功耗能力可通过简单PCB铜箔散热实现稳定工作。

4. 紧凑设计,兼容便携场景

SOT-23-3封装仅占用极小PCB面积,可集成到智能手表、运动手环等便携设备的电源模块中,同时低阈值电压(1.5V)无需额外驱动,简化电路设计。

三、典型应用场景

SM3402SRL的性能匹配以下场景需求:

1. 便携电子设备

  • TWS蓝牙耳机、智能手表:电源开关、电池充放电控制(低损耗延长续航);
  • 充电宝:升压/降压模块(高频开关适配快充需求)。

2. 小功率电源变换器

  • 5V/1A~5V/2A DC-DC降压模块(如手机充电器副边);
  • 微型升压模块(如LED背光驱动)。

3. 工业与车载应用

  • 工业传感器节点:电源开关(宽温适应户外环境);
  • 车载USB充电接口:5V输出控制(高可靠性满足车载振动/温度要求)。

四、设计与选型注意事项

为确保器件稳定工作,需注意以下要点:

1. 驱动电压控制

推荐使用 ( 3.3V \sim 10V ) 的 ( V_{GS} ) 驱动:10V下可获得最佳导通性能,避免 ( V_{GS} ) 超过15V(栅源最大耐压为±20V,但需注意静电防护)。

2. 散热设计

若持续工作在4A电流下,需确保PCB焊盘面积足够(建议至少0.5cm²铜箔),必要时增加小型散热片,避免结温超过150℃。

3. 静电防护

MOSFET栅极易受静电损坏,设计时需在栅极串联10Ω~100Ω限流电阻,或并联TVS管(如0805封装的ESD保护器件)。

4. 电容匹配

根据开关频率选择去耦电容:建议在电源输入端并联0.1μF陶瓷电容,减少开关噪声干扰。

总结

SM3402SRL作为一款高性价比的30V/4A N沟道MOSFET,凭借低导通损耗、快速开关、宽温可靠与超小型封装,成为便携电子、小功率电源、工业控制等领域的理想选择。尤其适合对效率、空间与可靠性有严格要求的应用场景,可直接替代同类进口器件,降低成本的同时保证性能。

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