Model & package intelligence
Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
YANGJIE BCP56-16Q BCP56
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- YANGJIE BCP56-16Q
- Type
- SOT-223
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- YANGJIE
- Electronic Component
- BCP56-16Q
- Electronic Component
- 1
- Package
- SOT-223
- Electronic Component
- 0.27g
- Electronic Component
- 1
- Electronic Component
- BM0225749459
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- models
- BCP56-16Q
- version
- 1
- prompt_id
- 15
- package_id
- 46
- image_model
- gpt-image-2.5-flare
- master_path
- chengming/packages/46/cm-master-zh/30f16910ee36c94745e83777aa8933d31c3679d537c78d16b5bdb0813ad69dfd.png
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BCP56-16Q 产品概述
一、产品简介
BCP56-16Q 为扬杰（YANGJIE）出品的一款 NPN 功率型双极晶体管，采用 SOT-223 封装，面向中小功率开关与驱动应用。器件在中等集电极电流下保持较高直流电流增益，配合较低的泄漏和中等耐压特性，适合电源管理与功率放大场合。
二、主要参数与电气特性
- 晶体管类型：NPN
- 直流电流增益 hFE：250 @ Ic=150mA, Vce=2V
- 集电极截止电流 Icbo：100nA（典型低泄漏）
- 集射极击穿电压 Vceo：80V
- 特征频率 fT：100MHz（适合中高速开关）
- 最大集电极电流 Ic：1A
- 耗散功率 Pd：1.5W（SOT-223 封装，需良好散热）
- 射基极击穿电压 Vebo：5V（注意基极正向耐压限制）
- 集射极饱和电压 VCE(sat)：500mV @ Ic=500mA、Ib=50mA（高电流时饱和压明显）
三、封装与热管理
SOT-223 相比 SOT-23 提供更好的散热能力，但 Pd=1.5W 仍需合理 PCB 散热设计。建议在焊盘处增加铜箔面积并连接地铜层以降低结-环境热阻；工作点设计时应考虑温升并按应用场景做功耗热沉计算与器件热降额。
四、典型应用场景
- 继电器/中小电流驱动器与开关管
- 线性或准线性放大级（前级驱动、音频小功率放大）
- LED 驱动、恒流源与电源管理电路
- DC-DC 转换器的开关或夹紧元件
其高 hFE 在 150mA 附近使其在驱动级可显著减小基极驱动电流。
五、使用建议与注意事项
- 由于 Vebo=5V，基极对发射极的反向击穿电压较低，禁止在基极施加过高反向电压；设计中加入限流或保护电路。
- 饱和电压在大电流时较高，若需低 VCE(sat) 应选用功率更大的器件或并联处理（并联需良好电流均衡）。
- 开关应用时应配置合适基极电阻与驱动能力，必要时并联抗扰或缓冲网络以抑制振铃。
- 在高频或快速切换场合，注意 fT 与寄生电容对开关损耗和稳定性的影响。
六、选型建议
BCP56-16Q 适合要求中等电流（≤1A）、中等电压（≤80V）、需要较高直流增益和良好 PCB 散热的场合。若需更高功耗或更低饱和压，应考虑更大封装或专用低饱和开关管；若要求更高速切换或更低漏电，可比较更高 fT 或更低 Icbo 的型号。
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