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YANGJIE UMX1N
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
13
specifications
Core information
- Product name
- YANGJIE UMX1N
- Type
- SOT-363
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- YANGJIE
- Electronic Component
- UMX1N
- Electronic Component
- 1
- Package
- SOT-363
- Electronic Component
- 0.029g
- Electronic Component
- 1
- Electronic Component
- BM0259482703
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
UMX1N 产品概述
一、概述
UMX1N 为一款小功率 NPN 双极结晶体管，设计用于开关和模拟放大场合。器件耐压适中、频率响应良好且封装紧凑，适合便携式与空间受限的电路板应用。品牌：YANGJIE（扬杰），封装：SOT-363，工作温度范围：-55℃ 至 +150℃。
二、主要技术参数
- 晶体管类型：NPN
- 集电极电流 Ic：150 mA（最大）
- 集射极击穿电压 Vceo：50 V
- 功耗 Pd：200 mW
- 直流电流增益 hFE：120（在 Ic=1 mA、Vce=6 V 条件下）
- 特征频率 fT：180 MHz
- 集电极截止电流 Icbo：100 nA（典型/最大量级）
- 集电极饱和电压 VCE(sat)：400 mV（饱和条件下）
- 射基极击穿电压 Vebo：7 V
- 封装：SOT-363（超小外形，适合高密度贴片）
三、特点与优势
- 高频性能良好：fT=180 MHz，适合高频小信号放大器及射频前端的部分应用。
- 低功耗封装：Pd=200 mW，适用于低功耗电子设备与信号级放大。
- 低漏电流：Icbo≈100 nA，有利于提高静态电路精度并降低漂移。
- 紧凑封装：SOT-363 有利于高密度布局与小型化产品设计。
- 宽温域工作能力：-55℃~+150℃，适合工业级环境。
四、典型应用场景
- 小信号放大器与音频前置放大电路。
- 开关驱动（低电流场合）、逻辑信号接口。
- 高频振荡器及中低功率射频放大器（依据频率与增益需求）。
- 手机配件、便携式仪器、传感器前端与混合信号电路中的通用放大/开关元件。
五、封装与热管理建议
SOT-363 为超小型封装，器件散热能力受限。设计时应注意：
- 保证集电极功耗 Pd 在工作条件下不超标，采用适当的散热路径与铜箔面积。
- 在高占空比或连续工作时计算结温升并留有裕量；必要时降低电流或增加并联/外部散热。
- PCB 布局尽量缩短关键信号走线，靠近接地平面以利散热与高频性能。
六、使用建议与注意事项
- 饱和开关时建议采用合适的基极限流电阻并按饱和驱动策略设计基极电流（考虑饱和时 hFE 下降）。
- 高频应用注意寄生电容与布线电感，布局和去耦对性能影响显著。
- 封装小型化对焊接与回流曲线敏感，遵循供应商推荐的焊接工艺与回流温度曲线。
- 详细引脚排列与典型电路请参阅完整数据手册以避免误接。
七、采购与替代建议
UMX1N 适合替换一般低功耗 NPN 小信号管，但在更高功率或更严苛温度/频率需求下，应选用更高 Pd 或更大封装产品。采购时确认批次及测试条件，必要时索取器件的实际曲线与封装图。
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