WMSIC Electronic Components

YANGJIE BC847C

ModelBC847C
PackageSOT-23
BrandYANGJIE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

13 specifications

Core information

Product name
YANGJIE BC847C
Type
SOT-23
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
YANGJIE
Electronic Component
BC847C
Electronic Component
1
Package
SOT-23
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0230005007
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC847C 产品概述

一、型号与主要参数

BC847C(品牌:YANGJIE 扬杰)是一款小功率通用 NPN 双极结晶体管,适用于开关和低功率放大场合。基于提供的参数,其主要电气特性如下:

  • 晶体管类型:NPN(BJT)
  • 最大集电极电流 Ic:100 mA
  • 集–射击穿电压 Vceo:45 V
  • 耗散功率 Pd:200 mW(SOT-23 封装,按环境与散热条件)
  • 直流电流放大倍数 hFE:420(测试条件:Ic=100 mA,Vce=5 V,典型值)
  • 特征频率 fT:100 MHz(适合低中频放大)
  • 集电极截止电流 Icbo:100 nA(常温下典型小漏电)
  • 集电极饱和电压 VCE(sat):500 mV(饱和时典型值)
  • 射基极击穿电压 Vebo:6 V(反向基–射限值)
  • 工作温度范围:-55 ℃ 至 +150 ℃
  • 封装:SOT-23-3(小型、表面贴装)

二、主要特点与优势

  • 高直流增益:在较大电流条件下(Ic=100 mA)仍能保持高 hFE(典型 420),适合需要高电流放大倍数的应用,减少基极偏置电流需求。
  • 低漏电流:Icbo 约 100 nA,适合对静态漏电敏感的便携式或低功耗电路。
  • 中等频率响应:fT ≈ 100 MHz,可用于小信号放大与普通模拟信号处理,不适合射频高带宽应用。
  • 小封装、易于自动贴装:SOT-23-3 适合体积受限的现代电子设备。
  • 宽温度范围:-55℃ 到 +150℃,适应工业级环境(实际可靠性与长期寿命应参照完整数据手册及可靠性测试)。

三、典型应用场景

  • 通用开关:微控制器输出或低压逻辑驱动的小型负载(继电器驱动需检查电流/功率余量)。
  • 信号放大:前级小信号放大器、传感器信号缓冲与放大。
  • 低功耗便携设备:由于低漏电与小封装,适合电池供电的控制电路。
  • LED 驱动(小功率)、电平转换、驱动晶体管阵列的级联放大。
  • 通用电子原型开发与教育用途。

四、封装与热管理要点

SOT-23-3 封装体积小,但热阻相对较高,Pd=200 mW 是在特定散热条件下的额定耗散功率。使用时应注意:

  • PCB 布局:在晶体管下方或相邻区域增加铜箔面积,有利于散热;必要时使用散热过孔与地铜平面。
  • 功率与结温:在高环境温度或连续高 Ic 条件下,应进行结温计算与功率降额(derating);避免长期在 Pd 极限附近工作。
  • 瞬态与脉冲:短脉冲驱动可超过平均 Pd,但需确保峰值能量不损伤器件。

五、使用与选型建议

  • 开关驱动基极电流:若希望器件进入饱和以降低 VCE(sat),应提供足够的基极电流。经验值可取 Ib ≈ Ic/10(视具体饱和 hFE 而定)。例如:用 3.3 V 驱动基极、Vbe≈0.7 V,欲驱动 Ic=100 mA,取 Ib=10 mA,则基极限流电阻 R ≈ (3.3−0.7)/10 mA ≈ 260 Ω(仅示例,实际按系统驱动电压与允许基流调整)。
  • 防止基–射反向击穿:基极与射极间反向电压不得超过 Vebo(6 V),在有反向电压可能的电路中加入保护元件(如限压二极管或合适偏置)。
  • ESD 与稳健性:SOT-23 包装易受静电损伤,装配与测试时注意静电防护;在敏感或有浪涌的环境应考虑并联保护元件。
  • 校验参数:文中参数以所给信息为依据,实际设计时请参考厂商完整数据手册以确认测试条件与极限值。

六、结论

BC847C(YANGJIE)是一款面向通用电子的 NPN 小信号晶体管,凭借高增益、低漏电和小封装,适合便携设备、开关驱动与小功率放大应用。在使用时需重视封装热限制与 Vebo 限制,通过合理的 PCB 散热和基极驱动设计,可在多数低功耗与中等频率场合提供可靠性能。若有特殊频率、功率或长寿命要求,建议结合完整器件数据手册与可靠性规范进行最终选型。

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