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AOS AONR21357
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- AOS AONR21357
- Type
- AOS
- Unit
- Electronic Component
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AONR21357
- Electronic Component
- 1
- Package
- DFN-8(3x3)
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.055g
- Electronic Component
- 1
- Electronic Component
- BM0000279039
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 30W
- Gate Voltage(Vgs)
- ±25V
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AONR21357 产品概述
产品型号：AONR21357
类型：P沟道场效应管（MOSFET）
封装：DFN-3x3-8L
品牌：AOS
一、基本参数
AONR21357是一款高性能的P沟道场效应管，其漏源电压（Vdss）为30V，能够有效地管理和控制电流。这使得该MOSFET非常适合用在电源管理和高侧开关应用中。产品的连续漏极电流（Id）在25°C环境下为34A（当冷却器保持在25°C时），这一特性使其能够承载较高的电流负载，适合高功率的应用场景。
二、关键指标
栅源极阈值电压：该产品的栅源极阈值电压为2.3V @ 250μA，这意味着在2.3V的电压下，MOSFET可以开始导通。此特性使得AONR21357在低电压驱动电路中使用时具备优良的适应性。
漏源导通电阻：在20A及10V的条件下，AONR21357显示出仅7.8mΩ的漏源导通电阻。这一低导通电阻极大降低了在正常运行时的功耗和热量产生，从而提高了设备的稳定性和可靠性。
最大功率耗散：在环境温度为25°C下，AONR21357的最大功率耗散为5W。该特性使其可以在多种应用中保持良好的热管理，避免因过热而导致的失效。
三、应用场合
AONR21357广泛应用于电源管理、开关电源、直流转直流转换器以及电动汽车、LED驱动等领域。其高电流承载能力和低导通电阻，尤其适合用于高效的电源开关和驱动电路。在可再生能源和电动汽车等新兴市场，其作用愈发重要。
由于其独特的P沟道特性，AONR21357能够通过简单的水平电平转换，使其便于与微控制器或其他逻辑电路集成。与此同时，其DFN-3x3-8L的封装设计，不仅助力于小型化设计，也有效地提升了散热性能。
四、功能优势
高效能：与同类产品相比，AONR21357的低导通电阻和高电流承载能力显著提升了系统的整体性能。
优良的热管理：其设计能够有效管理功耗和温度，使其在高温环境下也能稳定工作。
简易驱动：得益于适中的阈值电压，驱动需求可以通过简单的逻辑电平实现，无需复杂的驱动电路。
可靠性强：AOS作为知名品牌，其产品在电气性能和长期稳定性上经过严格测试，可靠性有保障。
五、小结
总结而言，AONR21357是一款功能强大的P沟道MOSFET，具有多项优越参数，适合多种高功率应用。此外，其紧凑的DFN封装和出色的热管理能力，使其在现代电子设计中成为一种理想的选择。无论是在电源管理、驱动电路，还是在电动汽车和LED照明等领域，AONR21357都将展现出其卓越的性能，满足不断增长的市场需求。
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