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AOS AONR21307
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- AOS AONR21307
- Type
- AOS
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- AOS
- Electronic Component
- AONR21307
- Electronic Component
- 1
- Package
- DFN-8(3x3)
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.05g
- Electronic Component
- 1
- Electronic Component
- BM69417449
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 5W；28W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 1.995nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AONR21307 产品概述
一、产品基本信息
AONR21307是AOS公司推出的一款高性能P沟道场效应管（MOSFET），具有优异的电气特性和广泛的应用潜力。该产品的额定功率为5W，最大功率可达28W，工作电压范围为30V，最大负载电流为24A，适合在多种中高功率应用场景中使用。它采用了DFN-8-EP(3x3)封装，具有紧凑的外形设计和优良的散热性能。
二、技术规格
- 类型：P沟道MOSFET
- 功率：5W（最大可达28W）
- 电压：30V
- 电流：24A
- 封装形式：DFN3x3A-8L
- 工作温度范围：-55℃至150℃
- 漏极-源极电压：V_DS @ 25℃ = 30V
- 阈值电压：V_GS(th)@ V_DS = -10V
- 开关速度：快速开关特性，适合高频应用
三、产品特点
高效率：AONR21307使用先进的制造工艺，优化了沟道设计，显著降低了导通电阻（R_DS(on)），从而实现了高电流处理能力和低功耗损耗。这在电源管理和电机驱动等需要高效能的应用中尤为重要。
出色的热性能：DFN封装设计提供了良好的散热路径，能够有效降低器件在高负载条件下的温升，有助于器件的长期稳定运行。
易于驱动：P沟道MOSFET的设计灵活，操作简单，可以与多种驱动电路兼容。这使得AONR21307在设计和应用过程中更加简便，提升了设计灵活度。
高可靠性：经过严格的质量控制，AONR21307在各种苛刻的环境条件下也能保持优异的性能，适合于各种工业、消费电子和电气设备的应用。
四、应用场景
AONR21307广泛应用于多种电源管理和开关控制场景，包括但不限于：
DC-DC转换器：在开关电源和降压转换器中，AONR21307可以作为主开关或同步整流器，提高转换效率并减小系统的体积；
电机驱动：在直流电机、步进电机驱动器等领域中，该MOSFET可用于控制电机的启停及转速调节；
LED驱动：AONR21307能够高效地调节LED的工作状态，用于照明和显示应用；
电池管理系统：在电池充电和放电控制电路中，AONR21307可以有效地管理电池的电能流动，提高整个电池系统的效率和安全性。
信号开关：作为开关元素，控制模拟信号或数字信号的送出与切换，提高信号传输的灵活性。
五、总结
AONR21307 P沟道MOSFET凭借其高功率、低电压丧失和优良的散热性能，成为行业内电子设计中的理想选择。无论是用于电源管理、马达控制，还是其他高效应应用，该产品都能满足最严格的性能需求。通过结合其出色的电气特性和可靠性，AONR21307将帮助工程师在实现高效率和小体积设计的同时，提升系统整体性能与稳定性。
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