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BORN BC817-40
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN BC817-40
- Type
- BORN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- BC817-40
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0264595474
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BC817-40 产品概述
一、产品简介
BC817-40（BORN伯恩半导体，SOT-23封装）为通用型NPN硅双极型晶体管，适用于开关和小信号放大场合。器件在紧凑的SOT-23封装中提供可靠的电流驱动能力与较高的击穿电压，便于表面贴装和批量生产使用。
二、主要规格参数
- 晶体管类型：NPN
- 集电极电流（Ic）：500 mA（最大）
- 集-射击穿电压（Vceo）：45 V
- 功耗耗散（Pd）：300 mW（SOT-23，环境及布线不同需查阅datasheet）
- 直流电流增益（hFE）：100（典型）
- 特征频率（fT）：100 MHz
- 集电极截止电流（Icbo）：100 nA（典型）
- 集电极饱和电压（VCE(sat)）：700 mV（典型，具体随Ib/Ic比变化）
- 射基极击穿电压（Vebo）：5 V
- 工作温度：-55 ℃ ~ +150 ℃
- 封装：SOT-23
- 数量：1 个 NPN
三、封装与引脚
SOT-23 小型封装适合表面贴装，常见引脚排列（请以实际封装图为准）：引脚1：基极（B），引脚2：集电极（C），引脚3：发射极（E）。SOT-23利于密集布线，但受限于散热能力，建议在PCB上配置适量铜箔并靠近地/电源平面以提升散热。
四、主要特性与优势
- 兼顾开关与小信号放大：45 V 的Vceo允许在中等电压环境工作，Ic达500 mA适合驱动小型负载。
- 高频响应良好：fT≈100 MHz，适合音频到低射频的小信号放大与缓冲。
- 低泄漏与稳定工作：Icbo约100 nA，适合高阻输入及低漏电要求的电路。
- 小型化与SMT兼容：SOT-23封装便于自动化贴装，适合消费电子与工业控制模块。
五、典型应用
- 低功耗开关控制与驱动（小型继电器、指示灯、传感器信号放大）
- 低电压信号放大器与驱动级
- 电平转换、缓冲器与前端放大
- 消费电子、通信终端、仪表与嵌入式控制电路
六、热管理与使用建议
SOT-23 封装的300 mW 耗散受PCB铜面积与环境温度影响明显。使用时应注意：
- 在靠近或超过25 ℃ 的环境中按厂商给出的温度降额曲线计算允许功耗；
- 对于持续较大集电极电流（接近或超过100 mA）场合，应增加散热铜箔、过孔或选择更大封装器件；
- 作为开关使用时，确保基极限流电阻合适以保证进入饱和又不超载基极；估算基极电流可按 Ib ≈ Ic/（hFE_sat），hFE_sat通常远小于直流增益hFE。
七、选型与替代建议
BC817-40 适合需要中等电流与中等电压规格的小型化电路。若需要更高功耗处理或更低饱和压，可考虑更大封装或专用功率晶体管；若需更高增益或频率性能，可寻找fT更高或hFE更大的替代型号。最终选型请以完整datasheet为准，并核对典型工作条件下的VCE(sat)、hFE曲线与温度特性。
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