WMSIC Electronic Components

BORN BDFN2C051V40

ModelBDFN2C051V40
PackageDFN1006-2L
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN BDFN2C051V40
Type
BORN
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
BDFN2C051V40
Electronic Component
1
Package
DFN1006-2L
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.009g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
34pF
Electronic Component
BM0211554289
Voltage
11V
Electronic Component
IEC 61000-4-2;IEC 61000-4-4
Current(Ir)
1uA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BDFN2C051V40 产品概述

一、产品简介

BDFN2C051V40 是 BORN(伯恩半导体)推出的一款用于静电放电与浪涌保护的 TVS/ESD 器件。单路、双向保护设计,适用于对高低压瞬态抑制要求严格的接口与信号线保护场合。封装为 DFN1006-2L(小尺寸 SMD),便于贴片组装与紧凑布局。

二、主要特性

  • 双向(Bi-directional)瞬态抑制,适合差分或双向信号线。
  • 峰值脉冲功率 Ppp = 200W(8/20µs 波形),能有效吸收瞬态能量。
  • 峰值脉冲电流 Ipp = 18A(8/20µs)。
  • 低结电容 Cj = 34pF,对高速数据线影响小。
  • 满足 IEC 61000-4-2(ESD)与 IEC 61000-4-4(EFT)等抗扰度标准。
  • 反向漏电流 Ir 极小,典型 1µA。

三、主要电气参数

  • 钳位电压(Vclamp):11V(在标准脉冲条件下的典型钳位值)。
  • 击穿电压(Vbr):6V(器件起始导通电压范围)。
  • 反向截止电压(Vrwm):5V(工作电压上限,适用于 5V/USB 类接口)。
  • 峰值脉冲功率:200W @ 8/20µs;峰值脉冲电流:18A @ 8/20µs。
  • 结电容:34pF(低电容设计利于高速信号完整性)。

四、典型应用

  • USB、HDMI、Ethernet 等高速接口保护。
  • 工业控制与传感器接口防护。
  • 通讯设备、移动终端、消费电子外部引脚防护。
  • 需要低电容、低漏电以保持信号质量的场合。

五、封装与安装

  • 封装:DFN1006-2L(小体积、适合高密度 PCB 布局)。
  • 建议将器件靠近需保护的接口或连接器放置,减小 PCB 引线电感与寄生阻抗。采用良好接地平面及短回流路径以提升保护性能。

六、使用注意事项

  • 器件为瞬态能量吸收器,不能作为持续电流或稳态电源保护器使用。
  • 钳位电压随脉冲幅值与波形变化,实际钳位需以系统测试为准。
  • 在 5V 及以上工作环境中注意 Vrwm(5V);高于工作电压时可能引起常导通或漏电。
  • 推荐在板级设计中配合阻抗匹配与滤波器件共同优化抗扰性能。

BDFN2C051V40 在小体积下兼顾高能量吸收与低电容特性,适用于对信号完整性和瞬态防护都有较高要求的电子设计。

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