WMSIC Electronic Components

BORN BC856B

ModelBC856B
PackageSOT-23
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN BC856B
Type
BORN
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
BC856B
Electronic Component
1
Package
SOT-23
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.035g
Electronic Component
1
Electronic Component
BM0228561632
Operating Temperature
55℃~+150℃
Transistor Type
PNP
Frequency(f T)
100MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BC856B 产品概述(BORN 伯恩半导体)

一、产品简介

BC856B 是一款小功耗、低电流增益高的 PNP 型双极结晶体管,采用 SOT-23 小封装,适合在空间受限的表面贴装电路中实现开关与模拟放大功能。该器件针对低功耗、低频到中高频(特征频率 fT = 100MHz)应用进行了优化,具有较低的集电极截止电流和较高的直流电流增益,适合便携式设备、传感前端和一般信号处理电路使用。

主要电气参数摘要(典型/极限值):

  • 晶体管类型:PNP
  • 集电极电流 Ic:100 mA(最大)
  • 集—发击穿电压 Vceo:65 V(最大)
  • 耗散功率 Pd:200 mW(封装极限)
  • 直流电流增益 hFE:200 @ Ic=2 mA, VCE=5 V(典型)
  • 特征频率 fT:100 MHz(典型)
  • 集电极截止电流 Icbo:100 nA(典型/最大级别)
  • 集-射饱和电压 VCE(sat):500 mV(典型/最大级别)
  • 射-基击穿电压 Vebo:5 V(最大)
  • 工作温度范围:-55℃ ~ +150℃
  • 封装:SOT-23
  • 品牌:BORN(伯恩半导体)

二、主要特性与优势

  • 高增益:在低电流工作点(Ic=2 mA)下 hFE≈200,可在小电流信号放大场景中获得良好放大系数与线性度。
  • 低漏电流:Icbo≈100 nA,利于高阻输入或休眠状态下的低漏电设计,减小静态功耗。
  • 中高压耐受:Vceo=65 V,允许在中等电压系统中使用,扩展了应用场景。
  • 中高频性能:fT≈100 MHz,适合处理音频至射频前端的较高频率信号(在合理偏置与负载条件下)。
  • 小型封装:SOT-23 便于表面贴装与批量自动化生产,适合空间受限的电路板设计。
  • 宽温度范围:工作温度可覆盖工业级至更宽范围,适合各种环境条件。

三、典型应用

  • 小信号放大器:音频前端、传感器信号放大、低电流放大器。
  • 开关电路:用于逻辑级别的低功耗开关、复位电路、控制信号驱动。
  • 电流镜与偏置源:利用高 hFE 在模拟电路中实现稳定偏置与镜像电流。
  • 电平移位:PNP 器件在双极性电平转换中可作为上拉/电平移位元件。
  • 通用电子产品:便携设备、仪器仪表、汽车电子的低功耗子电路(需注意工作电压与功耗条件)。

四、使用与设计注意事项

  • 功耗限制:器件 Pd=200 mW(SOT-23 封装),实际电路中应计算最大结温并留有安全裕度。高环境温度或有限散热时需降低工作电流/电压,以避免过热。
  • 反向基-射电压限值:Vebo=5 V,基极相对于发射极的反向电压不可超过此值,否则可能会损坏结结构,设计中避免给基极施加超过此限的反向电压。
  • 饱和电压与开关损耗:VCE(sat) ≈ 500 mV,作为开关元件时存在一定的导通损耗,需评估在高频开关或较大电流工况下的热耗与效率。
  • 泄漏与温漂:尽管 Icbo 较小,但在高温下漏电流会上升,应在高温工况下验证静态电流对系统偏置的影响。
  • 高频特性:fT=100 MHz 并不等同于可在该频率作线性放大,实际可用带宽受偏置点与负载影响,应结合电路仿真或实测评估增益带宽。

五、封装与工程实践

  • 封装为 SOT-23,适用于自动贴装和回流焊工艺。建议在 PCB 布局时为器件留出适当的热传导路径,尤其在连续工作或较高环境温度下,可通过靠近地铜/散热区域降低结温。
  • 管脚排列与管脚功能请以 BORN 提供的官方封装图与管脚定义为准,设计原型阶段应参考原厂数据手册进行管脚核对与焊盘设计。

六、采购信息与型号说明

  • 型号:BC856B
  • 品牌:BORN(伯恩半导体)
  • 常见购买渠道:电子元器件分销商与授权代理商(请向供应商索取最新数据手册与器件原厂确认件)。
  • 在选型与替换时,请确认关键参数(最大 Ic、Vceo、Pd、Vebo、工作温度等)与系统需求匹配,避免因封装、散热或极限参数差异导致可靠性问题。

如需更详细的电气特性曲线、频率响应、典型工作点下的 hFE 曲线或封装尺寸与管脚图,请提供是否需要我帮您联系/查找官方数据手册或进行典型电路设计示例。

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