WMSIC Electronic Components

BORN RB751S-40

ModelRB751S-40
PackageSOD-523
BrandBORN
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BORN RB751S-40
Type
BORN
Minimum package
3000 未知

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BORN
Electronic Component
RB751S-40
Electronic Component
1
Package
SOD-523
Electronic Component
Schottky Diode
Electronic Component
0.025g
Electronic Component
1
Electronic Component
BM0264692211
Current
30mA
Diode
1
Current(Ir)
500nA@30V
(Vf)
370mV@1mA
Electronic Component
40℃~+125℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

RB751S-40 产品概述

一、产品简介

RB751S-40 是伯恩半导体(BORN)推出的一款单颗独立式肖特基二极管,采用超小型 SOD-523 封装,面向低功耗、紧凑电路的保护与整流应用。器件具有低正向压降与低反向漏电流的组合特性,适用于便携式设备、电源管理和信号级整流等场景。

二、主要电气参数

  • 正向压降 Vf:约 370 mV @ If = 1 mA
  • 直流反向耐压 Vr:40 V
  • 额定整流电流 IF(AV):30 mA
  • 反向电流 Ir:500 nA @ Vr = 30 V
  • 非重复峰值浪涌电流 Ifsm:200 mA(一次性峰值)
  • 工作结温:-40 ℃ ~ +125 ℃
  • 封装:SOD-523,单颗独立式

三、特点与优势

  • 低压降:在微安至毫安级工作点表现出约 0.37 V 的低正向压降,有利于降低功耗并提高系统效率,尤其在低电压供电时优势明显。
  • 低漏电:在高达 30 V 反向电压下,反向电流仅约 500 nA,适合电池供电或待机功耗要求严格的设计。
  • 小型化封装:SOD-523 体积极小,适合高密度 PCB 布局与空间受限的移动设备。
  • 快速响应:肖特基结构带来快速恢复性能,适合高速信号通道和开关应用。
  • 宽温度范围:-40 ℃ 至 +125 ℃ 的结温范围保证其在常见工业与民用环境中的稳定性。

四、典型应用场景

  • 电源反接保护与极性保护(小电流场合)
  • 低压差整流与导通隔离(如USB/传感器电源路径)
  • 电源 ORing、备用电源自动切换(微流条件下)
  • 信号钳位与高速开关保护
  • 电池供电设备的节能路径与漏电控制

五、使用注意事项与封装建议

  • 电流限制:器件额定整流电流为 30 mA,长时间高于此电流将导致热量累积与可靠性下降;设计时应在安全余量内工作或采取散热措施。
  • 浪涌能力:Ifsm 为 200 mA,仅适用于瞬态浪涌,避免重复或长时间大浪涌。
  • 热管理:SOD-523 为小型封装,热阻较大,布局时应尽量靠近地/电源平面并增加铜箔以利散热。
  • 焊接与可靠性:遵循无铅回流焊工艺曲线,避免超温或过长加热时间;储运与贴装时注意防潮处理。
  • PCB 布局:建议短且宽的焊盘连线以降低接触电阻和改善散热,避免在高功率器件附近集中热源。

六、选型建议

若设计要求低正向压降与超低静态漏电且工作电流在几十毫安以内,RB751S-40 是经济且实用的选择。若需更高整流电流或更高耐压,应考虑功率级或更大封装的肖特基/整流二极管;若对浪涌能力或工作温度有更严格要求,也应在规格上做相应提升比较。

总体而言,RB751S-40 以其低 Vf、低 Ir、小封装的组合特性,适合便携与低功耗电源管理、电路保护及信号级整流等众多轻载应用。

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