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BORN 2SC2712
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- BORN 2SC2712
- Type
- BORN
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- BORN
- Electronic Component
- 2SC2712
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0264595476
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 80MHz
- Power Dissipation(Pd)
- 150mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2SC2712 产品概述
一、产品简介
2SC2712 为 BORN（伯恩半导体）推出的一款小功率 NPN 双极型晶体管，采用 SOT-23 表面贴装封装。器件设计用于小信号放大与低功耗开关应用，具有较高的带宽与稳定的直流增益，适合便携式与消费类电子设备的前端放大与驱动电路。
二、主要电气特性
- 晶体管类型：NPN（小信号型）
- 集电极电流 Ic：最大 150 mA
- 集-射击穿电压 Vceo：50 V
- 功耗 Pd：150 mW（SOT-23 封装，注意散热限制）
- 直流电流增益 hFE：典型 70（依工作电流和温度变化）
- 特征频率 fT：约 80 MHz，适合中高频小信号放大
- 集电极截止电流 Icbo：典型 100 nA（低漏电特性）
- 集-射饱和电压 VCE(sat)：约 250 mV（在典型驱动条件下）
- 发-基击穿电压 Vebo：5 V
- 工作温度范围：-55 ℃ 至 +150 ℃
三、封装与热性能
2SC2712 采用 SOT-23 三引脚小封装，便于高速贴片生产与高密度布局。由于封装体积有限，额定耗散功率为 150 mW，实际电路应考虑环境温度与铜箔散热条件进行 derating（降额使用），并避免长时间在高功耗下工作以防温升影响可靠性。
四、典型应用场景
- 小信号放大电路（前置放大、音频前端）
- 低电压开关与驱动（继电器小负载、指示灯驱动）
- 高频/中频放大器（移动设备、无线接收前端的低功耗级）
- 模拟电路中的电流水平转换与缓冲
五、使用建议与注意事项
- 在接近最大 Ic 或 Pd 工作时，应评估封装散热路径与 PCB 铜箔尺寸，必要时增加散热铜层或改用更大封装。
- Vebo 为 5 V，基极正向/反向电压超过此值可能损坏器件，使用基极限流电阻以保护发射结。
- 对于高速放大应用，注意版图与走线寄生、电容耦合对 fT 的影响，尽量缩短输入输出走线并做好接地。
- 在低漏电要求的电路中，器件的低 Icbo（~100 nA）有利于降低静态功耗，但在高温环境下需再次确认漏电变化。
六、结论
2SC2712 是一款适合于多种小功率、小尺寸电子产品的 NPN 小信号晶体管，兼顾中等电流能力与较高带宽，SOT-23 封装利于表贴生产与空间受限的设计。设计时应关注封装散热和基极保护，以确保器件在额定范围内长期可靠工作。若需批量采购或详细封装引脚图与完整电气特性曲线，请联系供应商获取器件数据手册。
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