WMSIC Electronic Components

BLUE ROCKET 2SD882T-P

Model2SD882T-P
PackageSOT89
BrandBLUE ROCKET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
BLUE ROCKET 2SD882T-P
Type
BLUE ROCKET
Minimum package
1000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
BLUE ROCKET
Electronic Component
2SD882T-P
Electronic Component
1
Package
SOT89
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.129g
Electronic Component
1
Electronic Component
BM0226491717
Transistor Type
NPN
Frequency(f T)
90MHz
Power Dissipation(Pd)
500mW
Electronic Component
Electronic Component
Electronic Component
1000
Collector Current(Ic)
3A

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SD882T-P 产品概述

一、产品简介

2SD882T-P 是 BLUE ROCKET 推出的通用 NPN 功率三极管,采用 SOT-89 贴片封装,适用于中小功率开关和驱动场合。该器件具有较低的漏电流和较高的集电极电流能力,适配电源管理、继电器驱动、小功率马达及音频前级等应用。

二、主要特点

  • 晶体管类型:NPN,封装:SOT-89,品牌:BLUE ROCKET。
  • 集射极击穿电压 Vceo = 30V,集基击穿电压 Vcbo ≈ 40V。
  • 允许集电极电流 Ic = 3A(瞬态或受限热条件下)。
  • 功耗 Pd = 500mW(在规定的环境温度与散热条件下)。
  • 集电极截止电流 Icbo ≈ 1μA(低漏电、适合高阻态要求)。
  • 射基极击穿电压 Vebo = 5V,需注意基极电压限制。
  • 饱和电压 VCE(sat) ≤ 0.5V(典型条件:Ic=2A, Ib=0.2A),导通损耗可控。

三、典型应用

  • 低压开关与负载驱动(继电器、指示灯、继电器线圈)。
  • 电源前端开关、线性稳压器的误差放大或驱动级。
  • 小型直流电机与步进电机驱动的功率级(注意散热)。
  • 音频放大器前级、信号放大与缓冲电路。

四、封装与热管理

SOT-89 为三引脚小型低剖面封装,适合表面贴装生产。由于 Pd=500mW 在 SOT-89 中属于中等功耗水平,实际使用时应重视 PCB 散热设计:增大铜箔面积、采用热 vias 或散热垫,并参考数据手册的结-周(θJA)与结-壳(θJC)热阻曲线以确定允许的集电极电流与占空比。

五、使用与注意事项

  • 基极电压不得超过 Vebo=5V;驱动时建议配限流电阻或基极保护。
  • 长时间高电流工作需评估 SOA(安全工作区)并采取降额或扩大散热。
  • 焊接时遵循 SMD 热循环规范,避免超温或过长回流时间。
  • 在设计前请参阅 BLUE ROCKET 官方数据手册以确认引脚定义、典型特性曲线及限制条件。

2SD882T-P 以其良好的导通性能与中等功耗能力,适合对体积与成本有要求的通用功率放大与开关场合。正确的热设计与合理的偏置电路可以充分发挥该器件的稳定性与可靠性。

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