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CJ 2N7002
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CJ 2N7002
- Type
- CJ
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CJ
- Electronic Component
- 2N7002
- Electronic Component
- 1
- Package
- SOT-23(SOT-23-3)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.036g
- Electronic Component
- 1
- Electronic Component
- BM69419833
- Power Dissipation(Pd)
- 225mW
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N7002 产品概述
一、基本信息
2N7002 是一款广泛应用于电子电路中的 N 沟道增强型场效应管（MOSFET），其主要特性为200mW功耗，60V 高电压和115mA的最大漏极电流。该元器件通常采用 SOT-23（三脚表面贴装）封装，方便在紧凑的电路设计中占用较小的空间。2N7002 由江苏长电（CJ）生产，以其高可靠性与优越性价比，成为许多电子设计师的首选元件。
二、结构与特性
作为N沟道MOSFET，2N7002的结构包括源极（Source）、漏极（Drain）和栅极（Gate）三个终端。其工作原理是通过在栅极施加电压来控制漏极和源极之间的电流流动。2N7002具有以下特性：
- 漏极-源极击穿电压（V_DS）：该值可高达60V，使其能够适应较高电压的应用要求。
- 最大漏极电流（I_D）：115mA的重要参数，适合低功耗电路及小型驱动电路。
- 栅极阈值电压（V_GS(th)）：通常在2-4V之间，确保在较低电压下就能开启。
- 导通电阻（R_DS(on)）：在驱动电流通过时，其导通电阻较低，能有效降低功耗和热量产生。
三、应用领域
2N7002广泛应用于多种电子电路中，具体包括：
- 开关电源：因其高效率和小功耗，适合用于DC-DC转换器等开关电源设计。
- 接口电路：在微控制器或逻辑电路中，2N7002可以作为开关来控制更高电流的负载。
- 信号调节：其快速开关响应特性，使2N7002适用于信号放大及调制解调电路。
- LED 驱动：在低电流 LED 照明系统中，2N7002能够高效地控制LED的开关状态。
四、设计考虑
在选择使用2N7002时，设计师需考虑以下几个因素：
- 散热问题：虽然2N7002的功耗较小，但在连续高负载运行时，适当的散热设计是必要的。
- 栅极驱动电压：优选确保栅极电压在推荐范围，以降低导通电阻与功耗。
- 负载特性：在设计电路时充分了解负载的电流特性，有效利用2N7002的特性来实现电路的最佳工作状态。
五、总结
2N7002 作为一种通用的N沟道MOSFET，凭借其小巧的SOT-23封装、高电压承受能力以及优秀的开关特性，成为电子产品设计中不可或缺的一部分。对于各种低功耗和中等功率应用，2N7002不仅可以简化电路设计，还可以提升整体电路的效率与可靠性。因此，无论是在新产品开发还是在现有项目改良中，2N7002 都是一个值得考虑的优良选择。
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