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CBI(创基) MMBT5401
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CBI MMBT5401
- Type
- CBI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CBI
- Electronic Component
- MMBT5401
- Electronic Component
- 1
- Package
- SOT23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0228586160
- Transistor Type
- PNP
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 600mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT5401 产品概述
一、主要特性
MMBT5401 是一款 SOT-23 封装的 PNP 小信号三极管，单只器件由 CBI(创基) 供应。器件具备高耐压与中等电流能力，典型特性包括：集射极击穿电压 Vceo = 150V、最大集电极电流 Ic = 600mA、耗散功率 Pd = 300mW（SOT-23 封装），便于在高压且功耗受限的电路中使用。直流电流增益 hFE ≈ 100（在 Ic=10mA、Vce=5V 条件下），特征频率 fT ≈ 100MHz，适合中高频放大与开关应用。
二、电气性能摘要
- 三极管类型：PNP，数量：1 个
- 直流电流增益 hFE：100 @ Ic=10mA、Vce=5V
- 集电极截止电流 Icbo：100nA（典型/最大值）
- 集射极击穿电压 Vceo：150V
- 射基极击穿电压 Vebo：5V（注意基—射极反向电压限制）
- 集射极饱和电压 VCE(sat)：≤500mV @ 50mA 或 5mA（测试条件下）
- 特征频率 fT：100MHz
- 最大集电极电流 Ic：600mA，耗散功率 Pd：300mW（需考虑 PCB 散热）
三、封装与热管理
器件采用 SOT-23 小封装，适合表面贴装。由于 Pd 仅 300mW，长时间高电流工作需谨慎：推荐在布板时增大集电极/散热焊盘铜箔面积，并利用多层板或加大地/电源铜层来降低结温。在高压或频率应用中，应注意引线电感及走线布局以减少寄生影响。
四、典型应用场景
- 高压小信号放大器与电压级隔离电路
- 开关用途（低侧/高侧小功率开关，需注意功耗限制）
- 音频前级放大、驱动级偏置电路
- 便携设备与消费电子中要求高耐压且体积小的场合
五、使用建议与注意事项
- 基—射极反向电压 Vebo = 5V，禁止超过此值以免损坏结区域。
- 虽然 Ic 峰值可达 600mA，但在 SOT-23 上持续大电流会导致结温迅速升高，建议依据实际 PCB 散热能力进行电流限制与热失配评估。
- VCE(sat) 在较大电流下仍有 ≈0.5V，开关损耗不可忽略；驱动电流需充分保证以降低饱和电压。
- 在高速应用注意走线与去耦，利用合理的偏置网络以稳定工作点。
概括而言，MMBT5401（CBI/创基，SOT-23）是一款兼顾高耐压与中等电流能力的小型 PNP 三极管，适合对体积与耐压有要求的模拟与开关应用，但在高功率场合需注意热管理与电流限值。
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