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CBI BC847C
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CBI BC847C
- Type
- CBI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CBI
- Electronic Component
- BC847C
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0237835638
- Transistor Type
- NPN
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 100mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BC847C 产品概述
一、概述
BC847C（创基 CBI 品牌，SOT-23 封装）是一款通用 NPN 小信号晶体管，单只供应，适用于小功率开关与高频放大。该器件在小体积封装下兼顾较高的集电极电压耐受能力与良好的频率性能，适合便携设备与高速信号链路的设计使用。
二、主要参数
- 晶体管类型：NPN
- 集电极电流 Ic：100 mA（最大）
- 集-射极击穿电压 Vceo：65 V
- 最大耗散功率 Pd：200 mW（器件功耗限制，需注意散热）
- 特征频率 fT：300 MHz（适合高频小信号放大）
- 集电极截止电流 Icbo：15 nA（低泄漏，有利于高阻抗电路）
- 发射极-基极击穿电压 Vebo：6 V（基-发结反向耐压限制）
- 封装：SOT-23（表面贴装，适合集成化电路板设计）
- 数量：1 个
三、特点与优势
- 高电压耐受：Vceo 达 65 V，适用于较高电压余量的开关场景。
- 高频性能良好：fT ≈ 300 MHz，可用于射频前端或宽带放大电路的低功率级。
- 低漏电流：Icbo 仅 15 nA，有利于低功耗和高阻态保持。
- 小型封装：SOT-23 便于表面贴装与自动化生产，但散热能力受限。
四、典型应用
- 小信号放大器（高频接收链的前置放大）
- TTL/CMOS 逻辑驱动与低电流开关
- 信号整形、缓冲与电平转换
- 便携式仪器、传感器接口与消费电子类产品
五、电路设计与注意事项
- 功耗与散热：Pd 仅 200 mW，在 SOT-23 下需确保 PCB 的散热设计（加铜箔、散热通孔）并避免长时间在高电流工作点。
- 基极驱动：基-发极反向耐压 Vebo = 6 V，避免对基极施加过大反向电压；驱动来源应串联限流电阻以防基区损坏。
- 基极偏置计算：在作为开关使用时，设计基极电阻应按所需饱和基流 Ib = Ic / βforced 计算，留有安全裕量以保证饱和。
- 抗静电与可靠性：SOT-23 器件对静电敏感，贴片与手工装配时注意 ESD 防护。
六、封装与引脚建议
SOT-23 三脚封装便于在 0603/0805 级别电路板上布线，常见布局为 E、B、C 排列（请依据实际封装引脚图与厂商资料核对），建议在布局时留足焊盘与热量扩散区域。
总结：BC847C（CBI，SOT-23）为一款性能均衡的 NPN 小信号晶体管，适合要求中等电流、高电压余量与较好频率响应的应用场景，但在高功耗场合需注意散热设计。请在最终设计中参考厂商完整数据表以获取更详尽的典型参数与限制。
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