WMSIC Electronic Components

CBI BAV21WT

ModelBAV21WT
PackageSOD-523
BrandCBI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CBI BAV21WT
Type
CBI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CBI
Electronic Component
BAV21WT
Electronic Component
1
Package
SOD-523
Electronic Component
Switch Diode
Electronic Component
0.023g
Electronic Component
1
Electronic Component
BM0257340707
Current
200mA
Diode
1
Current(Ir)
100nA@100V
(Vf)
1.25V@200mA
Power Dissipation(Pd)
200mW
Electronic Component
65℃~+150℃
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BAV21WT 产品概述

一、产品简介

BAV21WT 是创基(CBI)提供的一款高反向耐压、小型封装的独立式二极管,采用 SOD-523 封装,适合高密度表面贴装电路。该器件定位为小信号整流/开关用途,兼顾高反向电压和低泄漏电流的要求,适用于空间受限且需承受较高反向电压的应用场合。

二、主要电气参数

  • 二极管数量:单只(独立式)
  • 耗散功率(Pd):200 mW(器件本体最大允许耗散)
  • 正向整流电流(IF):200 mA(连续)
  • 直流反向耐压(VR):200 V(最大反向电压)
  • 正向压降(VF):1.25 V @ IF = 200 mA(在额定整流电流下的典型/标称值)
  • 反向电流(IR):100 nA @ VR = 100 V(低漏电流特性)
  • 工作结温范围(Tj):-65 ℃ ~ +150 ℃

以上参数为关键设计依据,选型时应同时参考具体应用的工作条件与热环境。

三、封装与机械特性

SOD-523 为超小型SMD封装,适合高密度贴片设计。该封装体积小、引线长度短,有利于降低寄生电感,但同时限制了散热能力与可承载电流。机械强度适合自动贴片与回流焊工艺,但手工焊接需注意焊接热量控制以免损伤器件。

四、热特性与可靠性

  • 200 mW 的耗散功率表明器件在小功率应用中工作更可靠。长期在接近 Pd 的条件下使用会加速老化,应进行功率降额设计。
  • 由于封装和尺寸限制,建议在 PCB 设计中采用适量铜箔(热沉)来改善散热,并避免在高温环境中持续通过最大整流电流。
  • 工作结温覆盖 -65 ℃ 至 +150 ℃,适合宽温度范围应用,但仍需关注焊接与储存时的热应力管理。

五、典型应用场景

  • 高压小信号整流与开关电路
  • 需要高反向耐压且漏电流要求低的检测/测量电路
  • 手持设备、便携仪表及通讯设备中的高密度贴片设计
  • 保护电路中的电压钳位与极性保护(在电流需求不大的场合)

六、PCB 布局与焊接注意事项

  • 在焊盘布局上尽量使用短引线与足够的焊盘面积以改善热传导。
  • 回流焊时遵循 SMD 小封装的热曲线,避免重复或过高的峰值温度导致器件热损伤。
  • 对于高频或开关场合,注意减小走线长度以控制寄生电感和阻抗。
  • 在高反向电压使用中,保持器件周围的爬电距离与清洁度以减少表面闪络风险。

七、选型与替代建议

  • 若应用需要更高的平均功率或更低的正向压降,应考虑更大封装或肖特基二极管。
  • 若主要关注低漏电且高反向耐压,BAV21WT 在小电流高压场合表现良好;如需更高持续电流,则选用功率等级更高的封装。
  • 对于严格的快速切换需求,需评估该器件的恢复时间并与目标电路要求匹配。

八、包装与储存

  • 小型 SMD 器件应以卷带或防静电托盘形式储存,避免受潮与静电损伤。
  • 建议在规定时间内完成贴装与焊接,若采用干燥箱保存,应遵循湿敏等级和回流焊前烘烤要求(参照创基出厂说明)。

总结:BAV21WT 以其 200 V 的高反压、极低的反向电流和超小型封装特点,适合空间受限且需高压耐受的小信号整流或保护应用。选用时应重点考虑功率耗散与散热布局,合理降额以保证长期可靠性。

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