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CBI 2N2222AU
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CBI 2N2222AU
- Type
- CBI
- Minimum package
- 1000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CBI
- Electronic Component
- 2N2222AU
- Electronic Component
- 1
- Package
- SOT-89
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.044g
- Electronic Component
- 1
- Electronic Component
- BM0228585471
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N2222AU 产品概述
一、产品概况
2N2222AU 为 NPN 型晶体管，由 CBI（创基）出品，采用 SOT-89 小型封装。该器件在小功率开关与信号放大场合表现可靠，结合较高的直流增益与频率特性，适合单片电路中驱动与放大应用。
二、主要电气参数
- 晶体管类型：NPN
- 集电极电流 Ic：600 mA（最大）
- 集—射极击穿电压 Vceo：40 V
- 功耗 Pd：500 mW（封装热耗散限制）
- 直流电流增益 hFE：300（测试条件：Ic=150 mA，Vce=10 V）
- 特征频率 fT：300 MHz
- 集电极截止电流 Icbo：10 nA（典型，温度相关）
- 集电极饱和电压 VCE(sat)：≤1 V（测试条件示例：Ic=500 mA，Ib=50 mA）
- 射基极击穿电压 Vebo：6 V
- 工作温度范围：-55 ℃ ～ +150 ℃
三、特性与优势
- 高频性能好：fT≈300 MHz，适用于需要一定带宽的信号放大或快速开关。
- 高增益：在中等集电极电流下 hFE 可达 300，有利于减小基极驱动电流。
- 小型封装：SOT-89 提供比较好的封装占用与相对散热性能，便于表面贴装与自动化生产。
- 低漏电流：集电极截止电流极小，利于高灵敏度电路的稳定性。
四、典型应用场景
- 低功率开关电路与继电器驱动（注意功耗与散热）
- 通用信号放大器、前置放大与驱动级
- 高频脉冲或快速切换电路（受限于封装热阻与最大 Ic）
- 工业与消费电子中常见小功率放大与驱动模块
五、使用注意事项
- 热管理：Pd 为 500 mW，连续工作时需评估 PCB 散热能力并遵循最大结温限制。
- 饱和与驱动：若在大电流（接近 500 mA）工作，基极驱动电流需充分保证以避免 VCE(sat) 上升。
- 极限参数：避免超过 Vceo 40 V 与 Vebo 6 V，以防击穿损坏。
- 环境与长期稳定性：在高温或温度循环应用中应考虑 Icbo 随温度上升带来的漏电流增大影响。
总结：CBI 创基的 2N2222AU 在小型化封装下兼顾增益与频率响应，适用于多种通用驱动与放大场合。设计时重点关注散热与恰当的基极驱动，以发挥其高增益与快速响应的优势。
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