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CBI 2N7002KDW
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CBI 2N7002KDW
- Type
- CBI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CBI
- Electronic Component
- 2N7002KDW
- Electronic Component
- 1
- Package
- SOT-363
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.016g
- Electronic Component
- 1
- Electronic Component
- BM0221031609
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 150mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述: 2N7002KDW MOSFET
一、基本信息
2N7002KDW 是一种高性能的 N 沟道场效应管（MOSFET），由 CBI（创基）品牌制造。此器件具有 150mW 的额定功耗、60V 的耐压能力和 300mA 的额定漏电流，适合广泛的电子应用。其封装形式为 SOT-363，适合于空间有限的电路设计。
二、主要特点
高耐压: 2N7002KDW 的最大漏极-源极电压（VDS）为 60V，这使其能够在较高电压的条件下稳定工作，适合用于电源管理、开关控制及高电压操作的应用场景。
低功耗: 该 MOSFET 的功耗额定值为 150mW，意味着在正常工作条件下能效较高，尤其适用于便携式和低功耗电子设备。
适中漏电流: 2N7002KDW 的最大漏电流为 300mA，这使得其在中等电流驱动场合表现优异。对于大多数日常应用及小型电机和负载开关控制来说，均能保证良好的性能。
小型封装: SOT-363 封装设计使得 2N7002KDW 特别适合需要紧凑设计的应用，如手持设备、嵌入式系统等。这种小型封装同时也有助于提高布线密度和减小板级空间需求。
优秀的开关特性: 作为 N 沟道 MOSFET，2N7002KDW 在开关响应速度和开关损耗上表现出色，这使得其十分适合用于高频率开关电源及脉宽调制（PWM）控制应用。
三、应用领域
2N7002KDW MOSFET 可广泛应用于多种电子设备和电路设计中，具体应用场景包括但不限于：
电源管理: 由于其高耐压和低功耗特性，广泛应用于 DC-DC 转换器、线性稳压器及电池管理系统中。
开关电路: 因其快速的开关特性，适用于用于各种开关装置如负载开关、继电器控制以及其他电气控制电路。
信号放大: 该 MOSFET 可用于缓冲和信号放大电路，提供良好的输入/输出隔离和信号完整性。
便携电子设备: 在便携式设备（如智能手机、平板电脑）中用于电源切换、充电模块等。
LED驱动: 利用其开关特性，2N7002KDW 很适合用于驱动 LED 照明电路中。
四、数据手册概述
在实际应用时，用户应参考 2N7002KDW 的数据手册，其中详细列出了该产品的电气特性、典型应用电路、封装信息及温度范围等重要信息。务必遵循推荐的电气参数，以确保器件在安全和高效的范围内工作。
五、总结
综合来看，2N7002KDW MOSFET 是一种兼具优良性能和适用性的电子元器件，尤其适合在需要高耐压和小型封装的应用场合。无论是电源管理、开关电路还是便携式设备，该MOSFET均展现出良好的适应能力和稳定性，是现代电子产品设计中不可或缺的一部分。对于寻求高效、可靠和高性能场效应管的工程师和设计师而言，2N7002KDW 提供了一种理想的解决方案。
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