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CBI MMBT5551W
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CBI MMBT5551W
- Type
- CBI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CBI
- Electronic Component
- MMBT5551W
- Electronic Component
- 1
- Package
- SOT-323
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0228586163
- Transistor Type
- NPN
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 600mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT5551W 产品概述
一、产品简介
MMBT5551W 是创基（CBI）推出的一款高压 NPN 通用晶体管，封装为 SOT-323（超小型封装），适合在空间受限且需要高耐压的小信号开关与放大场合使用。该器件在保持小体积的同时具备较高的集电极击穿电压与较好的直流增益，适用于高电压开关、信号放大与接口级电路。
二、主要参数
- 晶体管类型：NPN
- 集电极电流 Ic：600 mA（峰值/极限使用参考）
- 集射极击穿电压 Vceo：160 V
- 耗散功率 Pd：200 mW（封装热限）
- 直流电流增益 hFE：300 @ Ic=10 mA, Vce=5 V
- 特征频率 fT：300 MHz
- 集电极截止电流 Icbo：50 nA
- 集射极饱和电压 VCE(sat)：200 mV @ 50 mA, 5 mA（出厂标注）
- 射基极击穿电压 Vebo：6 V
- 封装：SOT-323（超小型）
三、性能亮点
- 高耐压：Vceo 达 160 V，可用于较高电压的开关与保护电路。
- 大直流放大：hFE 高达 300（在 10 mA 工作点），适合低功耗放大与电平转换。
- 高频性能好：fT≈300 MHz，适用于中高频放大或缓冲级。
- 低漏电：Icbo 仅 50 nA，利于高阻抗输入及低泄漏电路设计。
- 小型封装：SOT-323 适合高密度 PCB 设计，但需注意散热限制。
四、典型应用
- 高压开关与继电器驱动（需注意散热与脉冲工作模式）
- 小信号放大器、前置放大与缓冲器
- 电平转换、接口驱动（尤其在高压侧）
- 高频振荡与放大电路的模拟级（在 fT 限制内）
- 便携设备与消费电子中的高压保护与监测电路
五、封装与热管理
SOT-323 封装体积小，器件耗散功率 Pd 仅 200 mW，长期工作时需重视 PCB 散热设计：增加过孔、铜箔面积或将器件放置在热铜层上以降低结壳温升。对于大电流脉冲应用，应评估峰值功耗与周期，避免超出封装热极限。
六、使用建议与注意事项
- 基极反向电压 Vebo=6 V，避免基极-发射极反向过压以免损坏。
- VCE(sat) 标注为 200 mV（特定测试条件），实际饱和压随基极驱动、温度和电流变化，应在电路仿真或样机验证中确认。
- 虽然 Ic 标称 600 mA，持续大电流条件下受封装 Pd 限制，推荐在设计中留有裕量并采用合适的散热手段。
- 在高频应用中，应考虑寄生电容与封装引线影响，合理布局以减少寄生与振荡风险。
总结：MMBT5551W 是一款兼顾高耐压与较高增益的小型 NPN 晶体管，适用于空间受限且需处理较高电压的通用电子线路。设计时关注热管理与基极反向保护，可发挥其在开关与小信号放大领域的优势。
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