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CBI 2N2907AU
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CBI 2N2907AU
- Type
- CBI
- Minimum package
- 1000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CBI
- Electronic Component
- 2N2907AU
- Electronic Component
- 1
- Package
- SOT-89
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.14g
- Electronic Component
- 1
- Electronic Component
- BM0228585470
- Transistor Type
- PNP
- Frequency(f T)
- 200MHz
- Power Dissipation(Pd)
- 625mW
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Collector Current(Ic)
- 600mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N2907AU (2907A) 产品概述
一、产品简介
2N2907AU 是创基（CBI）生产的一款 PNP 双极型晶体管，封装为 SOT-89。该器件为中等电流能力的通用三极管，适用于开关和低频放大场合，具有较高的集电极电流承载能力和可靠的开关特性。
二、主要电气参数
- 晶体管类型：PNP
- 最大集电极电流 Ic：600 mA
- 集—射极击穿电压 Vceo：60 V
- 功耗 Pd：625 mW（封装热阻影响实际功耗能力，应结合 PCB 散热设计评估）
- 直流电流增益 hFE：50（在 Ic=500 mA，Vce=10 V 条件下）
- 集极截止电流 Icbo：10 μA（典型小漏电，利于静态功耗控制）
- 集电极-射极饱和压 VCE(sat)：约 1.6 V（在 Ic=500 mA，基极电流约 50 mA 条件下）
- 发射极—基极击穿电压 Vebo：5 V
三、性能特点
- 中等功率能力：600 mA 的峰值集电极电流使其可驱动较大负载，适合负载电流较高的开关应用。
- 稳定的增益表现：在 500 mA 工作点仍能保持约 50 的 hFE，便于在放大电路中获得可预测的增益。
- 可接受的饱和压：VCE(sat) ~1.6 V 在高电流开关时表现一般，需在电路设计中考虑功耗和压降。
四、典型应用场景
- 低频功率放大、驱动电路（继电器、灯、马达小负载）
- 通用开关器件，用于电源管理和保护电路
- 需要 PNP 极性的互补电路设计中作为上侧开关或电平移位元件
五、封装与热管理建议
SOT-89 封装便于表面贴装与中等功率散热，但额定耗散功率受 PCB 散热面积影响明显。实际应用中建议增大铜箔散热区、使用多层板和热过孔，以降低结温并提升长期可靠性。设计时计算功耗（P = Ic × Vce）并留有裕量，避免长时间在极限条件下工作。
六、选型与注意事项
- 若对饱和压或功耗要求更严格，可考虑更大功率封装或低 VCE(sat) 的饱和型晶体管。
- 发射极—基极击穿电压仅 5 V，设计偏置时应避免在基—射之间施加过高反向电压。
- 注意基极驱动电流需求（高 Ic 时需较大 Ib），并根据 hFE 选取合适的驱动比以确保饱和。
总结：2N2907AU 在 SOT-89 封装下提供了良好的中等电流处理能力和可靠的增益特性，适合需要 PNP 高侧开关或中等功率驱动的应用场合，合理的热设计和基极驱动是保证其稳定工作的关键。
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