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CRMICRO CRST055N08N
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CRMICRO CRST055N08N
- Type
- CRMICRO
- Minimum package
- 1000 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CRMICRO
- Electronic Component
- CRST055N08N
- Electronic Component
- 1
- Package
- TO-220
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 2.78g
- Electronic Component
- 1
- Electronic Component
- BM0092124539
- Power Dissipation(Pd)
- 174W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Voltage(Vdss)
- 85V
- Capacitor(Ciss)
- 3.086nF
- Gate (Qg)
- 55nC@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：CRST055N08N N沟道MOSFET
一、基本信息
CRST055N08N是一款高性能的N沟道MOSFET，适用于高功率应用，具有174W的功率承载能力，最大漏源电压为85V，以及最大驱动电流为120A。该器件采用了TO-220封装形式，适合于散热要求较高的电路设计。作为华润微公司（CRMICRO）的一款主力产品，CRST055N08N在各类电子应用中，尤其是在开关电源、电机驱动和照明控制等领域表现出色。
二、产品特点
高功率输出：CRST055N08N能够承受高达174W的功率输出，适合大功率应用，如电源转换器、功率放大器等。
高电压耐受：具备85V的漏源电压耐受能力，适合多种中高压电气环境，确保系统的稳定性和安全性。
大电流承载能力：其最大120A的持续电流特性，使其在需要快速开关和高电流传输的应用中，发挥卓越性能。
优越的开关特性：作为MOSFET，CRST055N08N在开关过程中表现出极低的导通电阻和高效的导通能力，优化了系统的能量效率，降低了热量产生。
优异的热管理：TO-220封装设计便于散热器的安装，有效降低工作温度，提升器件的整体性能和使用寿命。
三、应用场景
CRST055N08N N沟道MOSFET广泛应用于多个领域，主要包括但不限于以下几个方面：
开关电源（SMPS）：适用于各种开关电源设计，能够有效提高转换效率。
电动机驱动：可用于直流电机及步进电机的驱动，支持高频率的开关操作。
电源管理电路：在电池管理系统和其他电源监管应用中提供高效的功率转换。
LED驱动：由于其优秀的开关特性，适合用于LED照明控制，提供稳定的照明效果。
电力逆变器：在太阳能和风能等可再生能源系统中，作为逆变器布局的重要元件。
四、技术规格参数
- 类型：N沟道MOSFET
- 封装类型：TO-220
- 最大功率：174W
- 最大漏极-源极电压：85V
- 最大连续漏极电流：120A
- 导通电阻：通常在低于较小典型值
- 工作温度范围：通常在-55℃至+150℃
这些参数充分显示了CRST055N08N在高性能应用中的卓越性能，确保其在严苛工作环境中的可靠性。
五、总结
CRST055N08N是一款功能强大的N沟道MOSFET，凭借其高功率和高电流的特性，能够满足现代电子设计中对性能和效率的苛刻要求。其适应于多种应用场景的能力使其成为电子工程师和设计师们的理想选择。在不断发展的电子行业中，CRST055N08N将继续发挥重要作用，不断推动技术进步与创新。
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