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CRMICRO CR7N65FA9K
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CRMICRO CR7N65FA9K
- Type
- CRMICRO
- Minimum package
- 2500 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CRMICRO
- Electronic Component
- CR7N65FA9K
- Electronic Component
- 1
- Package
- TO-220F
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 2.36g
- Electronic Component
- 1
- Electronic Component
- BM0226507879
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 36W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 650V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CR7N65FA9K 产品概述
一、简述
CR7N65FA9K 是华润微（CRMICRO）出品的高压 N 沟道功率 MOSFET，单只器件适用于中低电流、高电压的开关场合。器件额定耐压 650V，设计适配开关电源、离线变换器以及功率因数校正等应用。
二、主要规格
- 类型：N 沟道 MOSFET（单只）
- 漏源电压 Vdss：650V
- 连续漏极电流 Id：7A
- 耗散功率 Pd：36W
- 导通电阻 RDS(on)：1.4Ω @ Vgs=10V
- 阈值电压 Vgs(th)：4V @ Id=250μA
- 栅极电荷 Qg：24nC @ Vgs=10V
- 输入电容 Ciss：1.08nF
- 输出电容 Coss：75pF
- 反向传输电容 Crss：3.2pF
- 工作温度范围：-55℃ ~ +150℃
- 封装：TO-220F（绝缘型）
三、特性与优势
- 650V 的耐压等级适合反激、正激与 PFC 初级开关等离线场合。
- 较高的导通电阻表明器件更适合中低电流或以开关损耗为主的场景；在持续大电流工况下需注意导通损耗。
- 中等栅极电荷（24nC）便于驱动设计，配合合适驱动器可在中频率范围内获得平衡的开关速度与 EMI 性能。
- TO-220F 封装带来方便的散热安装与电气隔离，便于模块化设计。
四、应用场景
- 离线开关电源初级侧功率开关（反激、正激）
- 功率因数校正（PFC）或辅助电源开关
- LED 驱动、家电控制与工业电源等对耐压要求高但电流中等的场合
五、驱动与设计注意事项
- 由于 Vgs(th)≈4V，建议采用 10~12V 的栅极驱动电压以保证低 RDS(on) 区域工作。
- 栅极电荷 24nC 在高频工作时对驱动器提出一定瞬时电流能力要求，需计算驱动器峰值电流与耗散能量并选择合适栅阻。
- 开关过程中关注 Coss/Crss 导致的开关损耗与回升电压，必要时配合缓冲/钳位电路（RCD、TVS）与合理的死区管理。
- 长时高温工作需注意器件热耗散与散热方式，按实际版图和散热片设计热阻与温升。
六、封装与可靠性
TO-220F（绝缘）方便通过螺栓安装散热片且保持电气隔离。实际热阻与寿命评估应参考完整数据手册的 RthJC、RthJA 与 SOA 曲线，进行合适的降额设计。
七、选型建议
若工作电流较高或要求更低导通损耗，可考虑同类 650V 等级中 RDS(on) 更低的器件；若侧重开关性能与更低开关损耗，可优先查找低 Qg 与低 Coss 的型号。最终选型应综合耐压、导通损耗、开关损耗与热设计要求。
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